Step Coverage Analysis for Hexamethyldisiloxane and Ozone Atmospheric Pressure Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Hexamethyldisiloxane (HMDSO) and ozone atmospheric pressure chemical vapor deposition (AP CVD) presents good step coverage. Silicon trench step coverage has been analyzed for this CVD using a one-dimensional gas diffusion model. The calculated step coverage exhibited the best fit when the sticking probability of HMDSO molecules is 0.002, causing the good step coverage. The gas phase concentration profiles were calculated using numerical simulation. The estimation of the rate-determining step indicated that HMDSO diffusion limited the CVD reaction rate and HMDSO itself participated directly in film formation.
- 社団法人応用物理学会の論文
- 1994-03-15
著者
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EGASHIRA Yasuyuki
Graduate School of Engineering Science, Osaka University
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Egashira Yasuyuki
Graduate School Of Engineering Science Osaka University
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Egashira Yasuyuki
Department Of Chemical Engineering Graduate School Of Engineering Science Osaka University
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Shimogaki Yukihiro
Department Of Materials Engineering Faculty Of Engineering Univerity Of Tokyo
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Komiyama H
Department Of Chemical System Engineering School Of Engineering University Of Tokyo
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Komiyama Hiroshi
Department Of Chemical Engineering Faculty Of Engineering University Of Tokyo
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Shimogaki Y
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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FUJINO Katsuhiro
Semiconductor Process Laboratory
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Shimogaki Yukihiro
Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,
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SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
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