Morphology Evolution of SiO_2 Films Deposited by Tetraethylorthosilicate/O_3 Atmospheric-Pressure Chemical Vapor Deposition on Thermal SiO_2
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概要
- 論文の詳細を見る
To understand the surface dependence of chemical vapor deposition using tetraethylorthosilicate and O_3, the evolution of the morphology of 5.3-μm-thick oxide films deposited on thermal oxide was observed by scanning electron microscopy. The surface roughness and low etching resistance of the films was caused by different growth rates at different surface sites. Some sites grow much faster that other sites, evolving from island, to tree, and finally to continuous films. Because of this growth sequence, the film has high porosity and is rough. This growth mode might be caused by site-dependent tetraethylorthosilicate absorption rates.
- 社団法人応用物理学会の論文
- 1999-01-15
著者
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Tsukamoto Koji
Department Of Chemical System Engineering University Of Tokyo:(present Address)fujitsu Laboratories
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Maeda Kohji
Department Of Physics Engineering Mie University
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MAEDA Kazuo
Semiconductor Process Laboratory Co., Ltd.
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Maeda K
Semiconductor Process Laboratory Co. Ltd.
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Nishimoto Y
Semiconductor Process Laboratory Co. Ltd.
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Nishimoto Yuko
Kanagawa University Department Of Chemistry
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Nishimoto Yuko
Semiconductor Process Laboratory Co. Ltd.
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Cheng Degang
Department Of Chemical System Engineering University Of Tokyo
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Komiyama Hiroshi
Department Of Chemical System Engineering University Of Tokyo
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Komiyama Hiroshi
Department Of Chemical Engineering Faculty Of Engineering University Of Tokyo
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TOKUMASU Noboru
Semiconductor Process Laboratory Co., Ltd.
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Maeda Kazuo
Semiconductor Division Fujitsu Ltd.
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Maeda Kazuo
Semiconductor Division Fujitsu Limited
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Tokumasu N
Semiconductor Process Laboratory Co. Ltd.
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Tokumasu Noboru
Semiconductor Process Laboratory Co. Ltd.
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