A Highly Accurate Laser-Sectioning Method for In-Motion Railway Inspection (Special Section on Machine Vision Applications)
スポンサーリンク
概要
- 論文の詳細を見る
As in other fields, the automatization of railway maintenance work is a firm requirement. The authors have developed a system detecting obstacles around a railway for practical railway inspection. The system is based on an original laser-sectioning method and characterized by high accuracy with wide view and in-motion operation. It was confirmed that a static calibration was performed at an accuracy of within 5 mm. Furthermore, a theoretical estimation predicted that dynamic errors can be eliminated within a resolution of 4 mm by means of rail movement detection. In field tests on the Chuo Line, facilities were successfully inspected at speeds up to 40 km/h.
- 社団法人電子情報通信学会の論文
- 1993-10-25
著者
-
Goto Y
Saitama Univ. Saitama‐shi Jpn
-
Nishimoto Y
Semiconductor Process Laboratory Co. Ltd.
-
Jin Yasuharu
Kobe Steel. Ltd.
-
Goto Yuichiro
Kobe Steel. Ltd.
-
Nishimoto Yoshiro
Kobe Steel. Ltd.
-
Naito Hiroyuki
Kobe Steel. Ltd.
-
Iwake Akio
Central Japan Railway Co.
関連論文
- Theoretical Analysis of Photoacoustic Displacement for Inhomogeneous Materials
- A New Method of Photothermal Displacement Measurement by Laser Interferometric Probe : Its Mechanism and Applications to Evaluation of Lattice Damage in Semiconductors
- A Highly Accurate Laser-Sectioning Method for In-Motion Railway Inspection (Special Section on Machine Vision Applications)
- Dose and Damage Measurements in Low Dose Ion Implantation in Silicon by Photo-Acoustic Displacement and Minority Carrier Lifetime
- Photodisplacement Measurement by Interferometric Laser Probe
- Evaluation of Parameters in Atmospheric-Pressure Chemical Vapor Deposition of Borophosphosilicate Glass Using Tetraethylorthosilicate and Ozone : Semiconductors
- Morphology Evolution of SiO_2 Films Deposited by Tetraethylorthosilicate/O_3 Atmospheric-Pressure Chemical Vapor Deposition on Thermal SiO_2
- Low-Temperature Atmospheric-Pressure Chemical Vapor Deposition Using 2, 4, 6, 8-Tetramethylcyclotetrasiloxane and Ozone