Low Temperature Chemical Vapor Deposition of High Quality SiO_2 Film Using Helicon Plasma Source

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概要

• 論文の詳細を見る

• Helicon plasma, a new compact high density plasma source, was investigated for chemical vapor deposition (CVD) of dielectric oxide. High quality films having low compressive stress of 1-2×10^9 dyne/cm^2, lower SiOH content with water-blocking capability and a wet HF etch rate comparable to that of thermal oxide were obtained. Sub-half-micron gaps with high aspect ratio were successfully filled by applying a substrate bias. A combination of biased helicon plasma CVD and atmospheric pressure (AP) tetraethyl orthosilicate [TEOS]-O_3 nondoped silicateglass (NSG) which has self-planarizing characteristics is proposed for planarization without chemical-mechanical polish (CMP).

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Nishimoto Yuko

  Semiconductor Process Laboratory Co. Ltd.

• TOKUMASU Noboru

  Semiconductor Process Laboratory Co., Ltd.

• Tokumasu Noboru

  Semiconductor Process Laboratory Co. Ltd.

• Maeda Kazauo

  Semiconductor Process Laboratory Co., Ltd.

• Maeda Kazauo

  Semiconductor Process Laboratory Co. Ltd.

関連論文

• Evaluation of Parameters in Atmospheric-Pressure Chemical Vapor Deposition of Borophosphosilicate Glass Using Tetraethylorthosilicate and Ozone : Semiconductors
• Morphology Evolution of SiO_2 Films Deposited by Tetraethylorthosilicate/O_3 Atmospheric-Pressure Chemical Vapor Deposition on Thermal SiO_2
• Low-Temperature Atmospheric-Pressure Chemical Vapor Deposition Using 2, 4, 6, 8-Tetramethylcyclotetrasiloxane and Ozone
• Low Temperature Chemical Vapor Deposition of High Quality SiO_2 Film Using Helicon Plasma Source

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