The Effect of Vapor Etching on "Diffuse-Up" of Buried Impurities into Epitaxial Layer

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1974-11-05

著者

• MAEDA Kazuo

  Semiconductor Process Laboratory Co., Ltd.

• Takayama Osamu

  Semiconductor Division Fujitsu Limited

• Maeda Kazuo

  Semiconductor Division Fujitsu Limited

関連論文

• Low-k SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor
• Properties of Low-k Cu Barrier SiOCNH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition using Hexamethyldisiloxane and Ammonia Gases
• The Effect of Vapor Etching on "Diffuse-Up" of Buried Impurities into Epitaxial Layer
• Evaluation of Parameters in Atmospheric-Pressure Chemical Vapor Deposition of Borophosphosilicate Glass Using Tetraethylorthosilicate and Ozone : Semiconductors
• Morphology Evolution of SiO_2 Films Deposited by Tetraethylorthosilicate/O_3 Atmospheric-Pressure Chemical Vapor Deposition on Thermal SiO_2
• Low-Temperature Atmospheric-Pressure Chemical Vapor Deposition Using 2, 4, 6, 8-Tetramethylcyclotetrasiloxane and Ozone
• Electrical Characteristics of Polycrystalline Silicon-Aluminum Oxide-Silicon Dioxide-Silicon Structure
• Low-$k$ SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor

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