Low Resistance Al/Si Ohmic Contacts on Boron Implanted Shallow p^+ Si Layers Formed by Halogen Lamp Annealing

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1983-11-20

著者

• Furukawa Masakazu

  Semiconductor Engineering Laboratory Pioneer Electronics Co.

• HARA Tohru

  Electrical Engineering, Hosei University

• OHTSUKA Noboru

  Electrical Engineering, Hosei University

• ENOMOTO Syuichi

  Electrical Engineering, Hosei University

• HIRAYAMA Takeshi

  Electrical Engineering, Hosei University

• AMEMIYA Kimio

  Semiconductor Engineering Laboratory, Pioneer Electronic Co.

• Hara Tohru

  Electrical Engineering Hosei University

• Amemiya Kimio

  Semiconductor Engineering Laboratory Pioneer Electronic Co.

• Ohtsuka Noboru

  Electrical Engineering Hosei University

• Hirayama Takeshi

  Electrical Engineering Hosei University

• Enomoto Syuichi

  Electrical Engineering Hosei University

• Furukawa Masakazu

  Semiconductor Engineering Laboratory Pioneer Electronic Co.

関連論文

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• Reflow of PSG Layers by Halogen Lamp Short Duration Heating Technique
• Low Resistance Al/Si Ohmic Contacts on Boron Implanted Shallow p^+ Si Layers Formed by Halogen Lamp Annealing
• Contact Resistance of Al/Si Ohmic Electrodes Formed by Rapid Lamp Sintering.
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