Rapid Heating Reflow of Phosphosilicate Glass Enhanced by As Ion Implantation

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1986-09-20

著者

• FURUKAWA Masakazu

  Canon Sales Corporation, INC., Process Equipment Division

• HARA Tohru

  Electrical Engineering, Hosei University

• Hara Tohru

  Electrical Engineering Hosei University

• Furukawa Masakazu

  Canon Sales Inc.

関連論文

• Production of Large-Diameter Microwave Plasma with a High-Permittivity Material Window
• Reflow of PSG Layers by Halogen Lamp Short Duration Heating Technique
• Low Resistance Al/Si Ohmic Contacts on Boron Implanted Shallow p^+ Si Layers Formed by Halogen Lamp Annealing
• Contact Resistance of Al/Si Ohmic Electrodes Formed by Rapid Lamp Sintering.
• Damage Formed by Si^+ Implantation in GaAs
• Rapid Heating Reflow of Phosphosilicate Glass Enhanced by As Ion Implantation
• Barrier Effects of Tungsten Infer-Layer for Aluminum Diffusion in Aluminum/Silicon Ohmic-Contact System
• Properties of Titanium Layers Deposited by Collimation Sputtering
• Stress in Al-Sc Interconnection Layers
• Silicidation Reaction and Stress in Ti/Si
• Formation of Titanium Nitride/Titanium Silicide by High Pressure Nitridation in Titanium/Silicon
• Properties of Titanium Nitride Films for Barrier Metal in Aluminum Ohmic Contact Systems
• Damage Formed on Silicon Surface by Helicon Wave Plasma Etching
• Barrier Properties for Oxygen Diffusion in a TaSiN Layer
• Damage Induced by Electron Cyclotron Resonance Plasma Etching on Silicon Surface
• Dose and Damage Measurements in Low Dose Ion Implantation in Silicon by Photo-Acoustic Displacement and Minority Carrier Lifetime
• Measurement of the Delamination of Thin Silicon and Silicon Carbide Layers by the Multi-Wavelength Laser Ellipsometer
• Carbon Ion Implantation in GaAs
• Thermal Stability in Al/Ti/GaAs Schottky Barrier
• Damage Formed by Plasma Boron Doping in Silicon
• Thermal Stability and Interfacial Reaction of Barrier Layers with Low-Dielectric-Constant Fluorinated Carbon Interlayer
• Interfacial Reaction in Polycide MOS Gate Structure Employing CVD Tungsten Silicide
• Capless Rapid Thermal Annealing of Silicon Ion Implanted Gallium Arsenide
• Resistivity of Thin Copper Interconnection Layers
• Damage Depth Profiles in Jon-Implanted Silicon by the Photoacoustic Displacement Technique

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