Properties of Titanium Layers Deposited by Collimation Sputtering
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-12-15
著者
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HARA Tohru
Electrical Engineering, Hosei University
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Hara Tohru
Electrical Engineering Hosei University
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Nomura Tomonori
Electrical Engineering Hosei University
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CHEN Shih
Oki Electric Industry Co. Ltd.
関連論文
- Reflow of PSG Layers by Halogen Lamp Short Duration Heating Technique
- Low Resistance Al/Si Ohmic Contacts on Boron Implanted Shallow p^+ Si Layers Formed by Halogen Lamp Annealing
- Contact Resistance of Al/Si Ohmic Electrodes Formed by Rapid Lamp Sintering.
- Damage Formed by Si^+ Implantation in GaAs
- Rapid Heating Reflow of Phosphosilicate Glass Enhanced by As Ion Implantation
- Barrier Effects of Tungsten Infer-Layer for Aluminum Diffusion in Aluminum/Silicon Ohmic-Contact System
- Properties of Titanium Layers Deposited by Collimation Sputtering
- Stress in Al-Sc Interconnection Layers
- Silicidation Reaction and Stress in Ti/Si
- Formation of Titanium Nitride/Titanium Silicide by High Pressure Nitridation in Titanium/Silicon
- Properties of Titanium Nitride Films for Barrier Metal in Aluminum Ohmic Contact Systems
- Damage Formed on Silicon Surface by Helicon Wave Plasma Etching
- Barrier Properties for Oxygen Diffusion in a TaSiN Layer
- Damage Induced by Electron Cyclotron Resonance Plasma Etching on Silicon Surface
- Dose and Damage Measurements in Low Dose Ion Implantation in Silicon by Photo-Acoustic Displacement and Minority Carrier Lifetime
- Measurement of the Delamination of Thin Silicon and Silicon Carbide Layers by the Multi-Wavelength Laser Ellipsometer
- Carbon Ion Implantation in GaAs
- Thermal Stability in Al/Ti/GaAs Schottky Barrier
- Damage Formed by Plasma Boron Doping in Silicon
- Thermal Stability and Interfacial Reaction of Barrier Layers with Low-Dielectric-Constant Fluorinated Carbon Interlayer
- Interfacial Reaction in Polycide MOS Gate Structure Employing CVD Tungsten Silicide
- Capless Rapid Thermal Annealing of Silicon Ion Implanted Gallium Arsenide
- Resistivity of Thin Copper Interconnection Layers
- Damage Depth Profiles in Jon-Implanted Silicon by the Photoacoustic Displacement Technique