Stress in Al-Sc Interconnection Layers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-10-01
著者
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原 徹
法政大 工
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HARA Tohru
Electrical Engineering, Hosei University
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Hara Tohru
Electrical Engineering Hosei University
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HOSODA Noriko
Electrical Engineering, Hosei University
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NAGANO Shozo
Central Research Laboratory, Mitsubishi Chemical Industries, Ltd.
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UEDA Tadao
Central Research Laboratory, Mitsubishi Chemical Industries, Ltd.
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Ueda Tadao
Central Research Laboratory Mitsubishi Chemical Industries Ltd.
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Nagano Shozo
Central Research Laboratory Mitsubishi Chemical Industries Ltd.
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Hosoda Noriko
Electrical Engineering Hosei University
関連論文
- Reflow of PSG Layers by Halogen Lamp Short Duration Heating Technique
- Low Resistance Al/Si Ohmic Contacts on Boron Implanted Shallow p^+ Si Layers Formed by Halogen Lamp Annealing
- Contact Resistance of Al/Si Ohmic Electrodes Formed by Rapid Lamp Sintering.
- Al-Si-Cu半導体超LSI電極スパッタリング膜の〈111〉結晶軸配向性
- Damage Formed by Si^+ Implantation in GaAs
- Rapid Heating Reflow of Phosphosilicate Glass Enhanced by As Ion Implantation
- Barrier Effects of Tungsten Infer-Layer for Aluminum Diffusion in Aluminum/Silicon Ohmic-Contact System
- Properties of Titanium Layers Deposited by Collimation Sputtering
- CMP後の汚染Cuの洗浄に関する検討
- 高エネルギーイオン注入および高ドーズ水素イオン注入の応用
- パターン平坦化研磨プロセスの評価技術(機械的プラナリゼーション技術)
- 1/4ミクロンプロセスに用いるオーミック電極と配線技術
- Al-Si-Cu配線膜の(111)面からの傾きとこれに影響を与えるCu高濃度層
- DC プラズマドーピング法 : 高キャリア濃度p^+ 層の形成
- Stress in Al-Sc Interconnection Layers
- Silicidation Reaction and Stress in Ti/Si
- Formation of Titanium Nitride/Titanium Silicide by High Pressure Nitridation in Titanium/Silicon
- Properties of Titanium Nitride Films for Barrier Metal in Aluminum Ohmic Contact Systems
- Damage Formed on Silicon Surface by Helicon Wave Plasma Etching
- ヘリコン波型プラズマエッチングによりSi表面に導入されるダメージの評価
- RBS法によるSrTiO3高誘電体膜の組成測定
- MOSFET特性の自動測定
- 銅めっき膜配線層の低比抵抗化--めっき液の純度と添加剤の効果
- 銅めっき配線層のCMP (特集 半導体プロセス技術のイノベーション) -- (CMP関連技術の最新トピックスを追う)
- Barrier Properties for Oxygen Diffusion in a TaSiN Layer
- Damage Induced by Electron Cyclotron Resonance Plasma Etching on Silicon Surface
- 浅い接合形成 (ハ-フミクロン以降の超LSIプロセス材料とその関連プロセス)
- Dose and Damage Measurements in Low Dose Ion Implantation in Silicon by Photo-Acoustic Displacement and Minority Carrier Lifetime
- Measurement of the Delamination of Thin Silicon and Silicon Carbide Layers by the Multi-Wavelength Laser Ellipsometer
- Carbon Ion Implantation in GaAs
- Thermal Stability in Al/Ti/GaAs Schottky Barrier
- Damage Formed by Plasma Boron Doping in Silicon
- Thermal Stability and Interfacial Reaction of Barrier Layers with Low-Dielectric-Constant Fluorinated Carbon Interlayer
- Interfacial Reaction in Polycide MOS Gate Structure Employing CVD Tungsten Silicide
- Capless Rapid Thermal Annealing of Silicon Ion Implanted Gallium Arsenide
- Resistivity of Thin Copper Interconnection Layers
- Damage Depth Profiles in Jon-Implanted Silicon by the Photoacoustic Displacement Technique