Interfacial Reaction in Polycide MOS Gate Structure Employing CVD Tungsten Silicide

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概要

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• Interfacial reaction of a CVD WSi_x polycide gate structure, WSi_x(2200 Å)/polysilicon (4500 Å)/SiO_2 (500 Å)/Si, has been studied by Rutherford backscattering spectroscopy technique. Annealing was done at temperatures of 900-1100℃ in flowing dry N_2 Slight interfacial reaction was observed at the WSi_x-polysilicon interface with 1000℃ annealing. At 1100℃ annealing, however, in addition to this reaction, other reaction was also observed in gate oxide-polysilicon and/or gate oxide-substrate silicon interfaces. Composition of WSi_x changed from nonstoichiometric (x=2.5) for as-deposited to stoichiometric (x=2.0-2.1) with annealing at temperatures above 900℃. Resistivity of CVD WSi_x polycide layer was around 900 μΩ・cm for as-deposited, and decreased rapidly to 80, 60 and 42 μΩ・cm with 900, 1000 and 1100℃ annealing, respectively.

• 社団法人応用物理学会の論文
• 1984-07-20

著者

• Hara Tohru

  Electrical Engineering Hosei University

• Enomoto S

  Electrical Engineering Hosei University

• Enomoto Syuichi

  Electrical Engineering Hosei University

• JINBO Toshikatsu

  Electrical Engineering, Hosei University

• Jinbo Toshikatsu

  Electrical Engineering Hosei University

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