Carbon Ion Implantation in GaAs

スポンサーリンク

概要

• 論文の詳細を見る

• Atom and carrier concentration profiles in carbon-ion-implanted GaAs have been measured. Ion implantation of carbon is performed at 300 keV with dose of 1.0×10^<14> ions/cm^2. Carbon concentration profile obtained by secondary ion mass spectrometry measurement is in good agreement with the profile obtained by Monte Carlo simulation. The implanted carbon does not diffuse markedly with annealing at 900℃ because the diffusion coefficient is below 4×10^<-16> cm^2/s for the ion-implanted carbon. Therefore, a shallow carrier concentration profile is formed after annealing. Activation efficiency is 17% at the surface (depth less than 0.47 μm). However, this efficiency is as low as 4% in deeper regions. The lower activation efficiency in deeper regions is due to the suppression of activation by the precipitation of carbon after the annealing.

• 社団法人応用物理学会の論文
• 1995-08-15

著者

• HARA Tamio

  Toyota Technological Institute

• HARA Tohru

  Electrical Engineering, Hosei University

• Hara T

  Toyota Technological Inst. Nagoya Jpn

• Hara Tohru

  Electrical Engineering Hosei University

• TAKEDA Satoru

  Electrical Engineering, Hosei University

• Takeda Satoru

  Electrical Engineering Hosei University

• Higashisaka Asamitsu

  Ulsi Device Development Laboratories Nec Corporation

• OIKAWA Hirokazu

  ULSI Device Development Laboratories, NEC Corporation

• Mochizuki A

  Tohoku Univ. Sendai‐shi Jpn

• MOCHIZUKI Akira

  ULSI Device Development Laboratories, NEC Corporation

• KOHZU Hideaki

  ULSI Device Development Laboratories, NEC Corporation

• Kohzu Hideaki

  Ulsi Device Development Laboratories Nec Corporation

• Oikawa Hirokazu

  Ulsi Device Development Laboratories Nec Corporation

関連論文

• Dotted-Array Plasma Production by Using a Line-Focusing Lens System with Segmented Prism Array for Compact X-ray Laser Experiments
• Demonstration of X-Ray Amplification in an X-Ray Laser Cavity Pumped by a Pulse-Train Yttrium Aluminium Garnet Laser
• Debris from High-Aspect-Ratio Rectangular Focused Laser Irradiation on a Tape Target Surface in an X-Ray Laser System
• Observation of Gain and Double-pass Amplification of Li-like Al Soft X-ray Transitions in a Recombining Plasma Pumped by a Pulse-train YAG Laser
• Reflow of PSG Layers by Halogen Lamp Short Duration Heating Technique
• Low Resistance Al/Si Ohmic Contacts on Boron Implanted Shallow p^+ Si Layers Formed by Halogen Lamp Annealing
• Contact Resistance of Al/Si Ohmic Electrodes Formed by Rapid Lamp Sintering.
• Measurements of Spatial Coherence of Recombination X-Ray Laser
• Damage Formed by Si^+ Implantation in GaAs
• Rapid Heating Reflow of Phosphosilicate Glass Enhanced by As Ion Implantation
• Barrier Effects of Tungsten Infer-Layer for Aluminum Diffusion in Aluminum/Silicon Ohmic-Contact System
• Properties of Titanium Layers Deposited by Collimation Sputtering
• 40 nm Width Structure of GaAs Fabricated by Fine Focused Ion Beam Lithography and Chlorine Reactive Ion Etching : Techniques, Instrumentations and Measurement
• Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam excited Plasma(EBEP) System : Etching and Deposition Technology
• Stress in Al-Sc Interconnection Layers
• Silicidation Reaction and Stress in Ti/Si
• Formation of Titanium Nitride/Titanium Silicide by High Pressure Nitridation in Titanium/Silicon
• Properties of Titanium Nitride Films for Barrier Metal in Aluminum Ohmic Contact Systems
• New Etching System with a Large Diameter Using Electron Beam Excited Plasma
• Comparative Studies between Ag-Sheathed YBa_2Cu_3O_y Wires and Sintered YBa_2Cu_3O_y
• Damage Formed on Silicon Surface by Helicon Wave Plasma Etching
• Enhancement of the 15.4 nm Line of the Lithiumlike Aluminum Recombining Plasma Laser using a Half Cavity
• Enhancement of Soft X-Ray Emission from Al Plasma by Pulse Train Laser Irradiation
• Observation of Soft X-Ray Amplified Spontaneous Emission in a Recombining Si Plasma Pumped by a Low-Power Laser
• Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System : Etching and Deposition Technology
• Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System
• Soft X-Ray Lasing in an Al Plasma Produced by a 6 J Laser
• New High Current Low Energy Ion Source
• Barrier Properties for Oxygen Diffusion in a TaSiN Layer
• Effect of Multipulse Waveform on Gains of Soft X-Ray Lines of Lithium-Like Aluminum Ions in Recombining Plasmas
• Damage Induced by Electron Cyclotron Resonance Plasma Etching on Silicon Surface
• Debris from the Target of an X-Ray Laser System and the Effect on Cavity Mirrors
• ECL-Compatible Low-Power-Consumption 10-Gb/s GaAs 8 : 1 Multiplexer and 1 : 8 Demultiplexer (Special Issue on High-Frequency/speed Devices in the 21st Century)
• Dose and Damage Measurements in Low Dose Ion Implantation in Silicon by Photo-Acoustic Displacement and Minority Carrier Lifetime
• Measurement of the Delamination of Thin Silicon and Silicon Carbide Layers by the Multi-Wavelength Laser Ellipsometer
• Contactless Measurement of Young's Modulus Using Laser Beam Excitation and Detection of Vibration of Thin-Film Microresonators
• Self-Aligned Formation of Porous Silicon Membranes Using Si Diaphragm Structures : Instrumentation, Measurement, and Fabrication Technology
• Carbon Ion Implantation in GaAs
• Thermal Stability in Al/Ti/GaAs Schottky Barrier
• A Transverse Electron Beam Source for the Excitation of CW Lasers
• Growth Rate and Crystallinity of Nanocrystalline Silicon Film Grown by Electron Beam Excited Plasma Chemical Vapor Deposition
• Analysis of Shear Buckling of Cylindrical Shells
• Characterization of Y-Ba-Cu-O Thin Films on Metallic Substrates Using Co-Evaporation Technique
• Damage Formed by Plasma Boron Doping in Silicon
• Application of a Ferroelectric Liquid-Crystal Cell to an Electric Field Sensor
• Thermal Stability and Interfacial Reaction of Barrier Layers with Low-Dielectric-Constant Fluorinated Carbon Interlayer
• Interfacial Reaction in Polycide MOS Gate Structure Employing CVD Tungsten Silicide
• Capless Rapid Thermal Annealing of Silicon Ion Implanted Gallium Arsenide
• Enhancement of Reactivity in Au Etching by Pulse-Time-Modulated Cl2 Plasma
• Variable Nonlinear Transfer Characteristics of MSLM
• Resistivity of Thin Copper Interconnection Layers
• Damage Depth Profiles in Jon-Implanted Silicon by the Photoacoustic Displacement Technique

もっと見る 閉じる

スポンサーリンク