Formation of Titanium Nitride/Titanium Silicide by High Pressure Nitridation in Titanium/Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-11-15
著者
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原 徹
法政大 工
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HARA Tohru
Electrical Engineering, Hosei University
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Chen Shih-chang
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Hara T
Kanagawa Univ. Yokohama Jpn
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Hara Tohru
Electrical Engineering Hosei University
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ENDO Nobuyuki
National Agricultural Research Center for Kyushu Okinawa Region (KONARC)
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TAMURA Hiroyuki
VLSI R&D Center, Oki Electric Industry Co. Ltd.
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KINOSHITA Kei
Electrical Engineering, Hosei University
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INOUE Ken
Electrical Engineering, Hosei University
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ENDO Nobuyuki
Electrical Engineering, Hosei University
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NAKAMURA Shigeaki
M. SETEK Co., Lid.
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Chen S‐c
Advanced Module Technology Division Taiwan Semiconductor Manufacturing Company
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Kinoshita K
Assoc. Super‐advanced Electronics Technol. Yokohama Jpn
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Inoue K
Biological Institute And Herbarium Faculty Of Science Shinshu University
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- Barrier Effects of Tungsten Infer-Layer for Aluminum Diffusion in Aluminum/Silicon Ohmic-Contact System
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- Barrier Properties for Oxygen Diffusion in a TaSiN Layer
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- Interfacial Reaction in Polycide MOS Gate Structure Employing CVD Tungsten Silicide
- Capless Rapid Thermal Annealing of Silicon Ion Implanted Gallium Arsenide
- Notes on the Pollination of Cypripedium macranthos var. speciosum and Dactylorhiza aristata (Orchidaceae)
- Seasonal synchrony between pheromone trap catches of the bean bug, Riptortus pedestris (Heteroptera : Alydidae) and the timing of invasion of soybean fields
- Resistivity of Thin Copper Interconnection Layers
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