Structure and Electrical Properties of Thin Ta_2O_5 Deposited on Metal Electrodes

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概要

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• The structure and electrical properties of chemical vapor deposition (CVD)-Ta_2O_5 thin films on Pt, Ru and poly-Si electrode were studied. With 75O℃ annealing after Ta_2O_5 deposition, a 12-nm-thick Ta_2O_5 on Pt and Ru shows a SiO_2 equivalent thickness (t_<eq>) of O.9 nm. We found that Ta_2O_5 on Pt and Ru shows (110) and (001) orientation, respectively. There is no interaction between Ta_2O_5 and these electrodes with 75O℃ annealing. t_<eq> on Pt and Ru decreases with annealing temperature increase. On the other hand, Ta_2O_5 on poly-Si is randomly oriented and its t_<eq> does not change with annealing temperature increase. The relative dielectric constant of Ta_2O5 on Pt and Ru, which is highly oriented with 75O℃ annealing, is estimated over 50. It is clear that the Ta_2O_5 electrical properties are strongly related with its crystallinity.

• 社団法人応用物理学会の論文
• 1998-03-30

著者

• Chen Shih-chang

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• Inoue N

  National Defense Acad. Yokosuka Jpn

• Inoue N

  Oki Electric Ind. Co. Ltd. Tokyo Jpn

• Chen S‐c

  Advanced Module Technology Division Taiwan Semiconductor Manufacturing Company

• YOSHIMARU Masaki

  VLSI R&D Center, OKI Electric Industry Co., Ltd.

• KISHIRO Koichi

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

• INOUE Nobuhiko

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

• Kishiro Koichi

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• Yoshimaru Masaki

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

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