Electrical and Crystallographic Properties of Sputtered-Pb(Zr,Ti)O_3 Films Treated by Rapid Thermal Annealing
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概要
- 論文の詳細を見る
Pyrochlore-phase lead-zirconate-titanate (PZT) films were prepared by rf-magnetron sputtering using a multielement metal target at 400℃. These films were crystallized to the perovskite phase by rapid thermal annealing (RTA) at 600℃ for a few minutes. The RTA-treated PZT films had not only extremely smooth surfaces but also tenfold stronger X-ray diffraction peak intensities of the perovskite structure than those of furnace-annealed films which had with rough undulation. The electrical properties of RTA-treated films indicated good ferroelectric properties. The remanent polarization and coercive field of the 100 nm-thick RTA-treated film were 15 μC/cm^2 and 67kV/am, respectively. Fatigue measurements with alternating ±3 V pulses showed that the film was stable up to 10^9 cycles.
- 社団法人応用物理学会の論文
- 1993-09-30
著者
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Tamura H
R&d Center Kasado Administrative Division Power & Industrial Systems Hitachi Ltd.
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TAMURA Hiroyuki
VLSI R&D Center, Oki Electric Industry Co. Ltd.
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YOSHIMARU Masaki
VLSI R&D Center, OKI Electric Industry Co., Ltd.
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INO Masayoshi
VLSI R&D Center, OKI Electric Industry Co., Ltd.
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Ino Masayoshi
Oki Electric Industry Co. Ltd. Vlsi Rampd Center
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Ino Masayoshi
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Tamura H
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Tamura Hitomi
Network Design Research Center Kyushu Institute Of Technology
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Tamura Hitoshi
Mechanical Engineering Research Laboratory Hitachi Ltd.
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YAMAUCHI Satoshi
VLSI R&D Center, Oki Electric Industry Co., Ltd.
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Yamauchi S
Faculty Of Agriculture Ehime University
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Yamauchi Satoshi
Laboratory Of Pesticide Chemistry Faculty Of Agriculture Kyushu University
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Yoshimaru Masaki
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Yamauchi Satoshi
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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