INO Masayoshi | VLSI R&D Center, OKI Electric Industry Co., Ltd.
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概要
関連著者
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INO Masayoshi
VLSI R&D Center, OKI Electric Industry Co., Ltd.
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Ino Masayoshi
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Tamura H
R&d Center Kasado Administrative Division Power & Industrial Systems Hitachi Ltd.
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TAMURA Hiroyuki
VLSI R&D Center, Oki Electric Industry Co. Ltd.
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YOSHIMARU Masaki
VLSI R&D Center, OKI Electric Industry Co., Ltd.
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Ino Masayoshi
Oki Electric Industry Co. Ltd. Vlsi Rampd Center
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Tamura H
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Tamura Hitomi
Network Design Research Center Kyushu Institute Of Technology
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Tamura Hitoshi
Mechanical Engineering Research Laboratory Hitachi Ltd.
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Yoshimaru Masaki
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Chen S‐c
National Taiwan Normal Univ. Taipei Twn
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Chen Shih-chang
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Sakamoto Akihiro
Process Technology Center Oki Electric Industry Co. Ltd.
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IDA Jiro
Device Business Group, Oki Electric Industry Co., Ltd.
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Ida J
Device Business Group Oki Electric Industry Co. Ltd.
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Ida Jiro
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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Ishii Satoshi
VLSI R&D Center, OKI Electric Industry Co., Ltd.
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Kajita Youko
VLSI R&D Center, OKI Electric Industry Co., Ltd.
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Yokoyama Tomonobu
VLSI R&D Center, OKI Electric Industry Co., Ltd.
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YAMAUCHI Satoshi
VLSI R&D Center, Oki Electric Industry Co., Ltd.
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Yamauchi S
Faculty Of Agriculture Ehime University
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Yamauchi Satoshi
Laboratory Of Pesticide Chemistry Faculty Of Agriculture Kyushu University
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Yokoyama T
Semiconductor Device Research Center Matsushita Electronics Corporation
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Yokoyama Tomonobu
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Kajita Youko
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Ishii Satoshi
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Yamauchi Satoshi
Vlsi R&d Center Oki Electric Industry Co. Ltd.
著作論文
- Applicability of TiN Adhesion Layer Formed by Nitridation of Sputtered Ti Film to Blanket CVD-W Contact Filling
- A Highly Drivable CMOS Design with Very Narrow Sidewall and Novel Channel Profile for 3.3V High Speed Logic Application (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Electrical and Crystallographic Properties of Sputtered-Pb(Zr,Ti)O_3 Films Treated by Rapid Thermal Annealing