Growth of [111]-Oriented Lead Zirconate Titanate Thin Film with Smooth Surface to Improve Electrical Properties

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概要

• 論文の詳細を見る

• [111]-Oriented lead zirconate titanate (PZT) films with smooth surfaces were successfully grown on (111)-oriented polycrystalline Pt substrates after in-situ Ar-plasma cleaning by low-temperature reactive sputtering and rapid thermal annealing. The Pb composition was stoichiometrically controlled not only for total composition but also in the depth direction by low-temperature reactive sputtering. A (111)-oriented perovskite-phase PZT film with a very smooth surface was then obtained by rapid thermal annealing. The leakage current of quasi-epitaxial PZT films was markedly reduced to 10-7 A/cm2 and the equivalent SiO2 layer thickness of around 0.4 nm was obtained for the fatigue-free PZT films thinner than 100 nm.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-28

著者

• Yoshimaru Masaki

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• Yamauchi Satoshi

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• Yoshimaru Masaki

  VLSI R&D Center, Oki Electric Industry Co., Ltd., Higashiasakawa, Hachioji, Tokyo 193, Japan

• Yamauchi Satoshi

  VLSI R&D Center, Oki Electric Industry Co., Ltd., Higashiasakawa, Hachioji, Tokyo 193, Japan

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• Growth of [111]-Oriented Lead Zirconate Titanate Thin Film with Smooth Surface to Improve Electrical Properties

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