Quasi-Epitaxial Growth of PZT Thin Film to Fabricate Capacitor Suitable for 256Mb DRAM and Beyond

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• YAMAUCHI Satoshi

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

• Yoshimaru Masaki

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• Yamauchi Satoshi

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

関連論文

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• Structure and Electrical Properties of Thin Ta_2O_5 Deposited on Metal Electrodes
• Properties of Highly Oriented Ta_2O_5 on Metal Electrodes
• Water Desorption Control of Interlayer Dielectrics to Reduce MOSFET Hot Carrier Degradation (Special Issue on Quarter Micron Si Device and Process Technologies)
• Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon Oxide
• Quasi-Epitaxial Growth of PZT Thin Film to Fabricate Capacitor Suitable for 256Mb DRAM and Beyond
• SiH_4/H_2O_2 Oxide Planarization Controlled by Surface Reaction of Si-H Bond
• Growth of [111]-Oriented Lead Zirconate Titanate Thin Film with Smooth Surface to Improve Electrical Properties

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