Water Desorption Control of Interlayer Dielectrics to Reduce MOSFET Hot Carrier Degradation (Special Issue on Quarter Micron Si Device and Process Technologies)

概要

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Water desorption from interlayer dielectric, spin-on-glass and SiO_2 film deposited with tetraethylorthosilicate and O_3, was controlled in order to reduce MOSFET hot-carrier degradation by using plasma SiO_2 film as a water blocking layer. Two kinds of plasma SiO_2 film were used in this study: SiH_4 plasma SiO_2 film deposited with SiH_4 and N_2O, and TEOS plasma SiO_2 film deposited with TEOS and O_2. Thermal desorption spectroscopy was used to study water desorption. Reduction of water desorption was obtained using plasma SiO_2 film with water blocking ability; this reduction of water desorption resulted in suppression of the MOSFET hot-carrier degradation. The water blocking ability was obtained by low pressure deposition for SiH_4 plasma SiO_2 and low flow rate ratio of TEOS to O_2 deposition for TEOS plasma SiO_2. Water absorption studies of plasma SiO_2 film using Fourier transform infrared spectroscopy revealed that water blocking ability is associated with small amount of water absorption both in SiH_4 plasma SiO_2 film and in TEOS plasma SiO_2 film. Consequently, it is considered that the water blocking ability, as well as water absorption, of plasma SiO_2 film depends on porosity.
社団法人電子情報通信学会の論文
1994-03-25