SiH_4/H_2O_2 Oxide Planarization Controlled by Surface Reaction of Si-H Bond

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概要

• 論文の詳細を見る
• 1997-09-16

著者

• Yoshimaru Masaki

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• YOSHIE Toru

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

• Yoshie Toru

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

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• SiH_4/H_2O_2 Oxide Planarization Controlled by Surface Reaction of Si-H Bond
• Growth of [111]-Oriented Lead Zirconate Titanate Thin Film with Smooth Surface to Improve Electrical Properties

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