Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon Oxide

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概要

• 論文の詳細を見る

• A new interlayer dielectric film using fluorine-doped silicon oxide (SiOF) for multilevel interconnection of very large scale integration (VLSI) has been fabricated. The film is deposited by a simple technique, which is hexafluoroethane (C_2F_6) addition to conventional tetraethoxysilane (TEOS)-based plasma-enhanced chemical vapor deposition (PE-CVD). Si-F bond formation in the film is detected by chemical bonding structural studies using Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). Low dielectric constants caused by Si-F bond formation and good gap-filling ability due to in situ etching by C_2F_6 plasma are obtained. Therefore, SiOF film has very high applicability as an interlayer dielectric film for advanced VLSI devices.

• 社団法人応用物理学会の論文
• 1994-01-30

著者

• Yoshimaru Masaki

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• Usami Takashi

  Vlsi R&ampd Center Oki Electric Industry Company Ltd.

• Shimokawa Kimiaki

  VLSI R&D Center, OKI Electric Industry Company, Ltd.

• Shimokawa Kimiaki

  Vlsi R&ampd Center Oki Electric Industry Company Ltd.

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