Ferromagnetism in Semiconductor Dot Array

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-03-15

著者

• Shiraishi K

  Institute Of Physics University Of Tsukuba

• Tamura H

  R&d Center Kasado Administrative Division Power & Industrial Systems Hitachi Ltd.

• SHIRAISHI Kenji

  NTT Basic Research Laboratories

• TAKAYANAGI Hideaki

  NTT Basic Research Laboratories, NTT Corporation

• TAMURA Hiroyuki

  NTT Basic Research Laboratories, NTT Corporation

• Tamura H

  Department Of Computer Science And Electronics Kyushu Institute Of Technology

• Tamura Hitomi

  Network Design Research Center Kyushu Institute Of Technology

• Tamura Hitoshi

  Mechanical Engineering Research Laboratory Hitachi Ltd.

• Tamura Hideki

  Faculty Of Eng. Yamagata Univ.

• Shiraishi K

  Institute Of Physics Tsukuba University

• Takayanagi Hideaki

  Ntt Basic Research Laboratories

• Tamura Hiroyuki

  Ntt Basic Research Laboratories

関連論文

• Adsorption Properties of CH_3OH on Al(111) and Fe(100) Surfaces : A Periodic First-Principles Investigation
• High-resolution RBS analysis of Si-dielectrics interfaces
• Performance Analysis of Flow Loss Probability and Link Utilization in MPLS Networks for Traffic Engineering(MPLS)(Internet Technology IV)
• Performance Analysis of IP Datagram Transmission Delay in MPLS: Impact of Both Number and Bandwidth of LSPs of Layer 2(Special Issue on Internet Technology II)
• Rashba Spin-Orbit Coupling Probed by the Weak Antilocalization Analysis in InAlAs/InGaAs/InAlAs Quantum Wells as a Function of Quantum Well Asymmetry
• Conditions for the Spin Rectification Phenomena Predicted for Semiconducting Triple Barrier Structures in the Presence of the Rashba Spin-Orbit Coupling
• Investigation of Ferromagnetic Microstructures by Local Hall Effect and Magnetic Force Microscopy
• Spin-Filter Device Based on the Rashba Effect Using a Nonmagnetic Resonant Tunneling Diode
• Conditions for the Spin Rectification Phenomena Predicted for Semiconducting Triple Barrier Structures in the Presence of Rashba Spin-Orbit Coupling
• 31a-ZF-6 Spin-split subbands in an inverted InGaAs/InAlAs heterostructure
• Superconducting Three-Terminal Devices Using an InAs-Based Two-Dimensional Electron Gas
• First-principles Study on the Stable Molecular Structures of Peptide Nanotubes
• Carbon in III-V Compounds: A Theoretical Approach
• Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2
• Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
• Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
• Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
• Basic Investigation on Achieving High Resonance Quality Factor of Piezoelectric Vibrator
• Effect of Nitrogen on Diffusion in Silicon Oxynitride
• The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO_2
• Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl
• Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
• Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
• The Effect of Chlorine on Silicon Oxidation : Simulation based on the Interfacial Silicon Emission Model
• Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
• Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
• Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
• Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
• Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
• Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
• Mechanism of the Reduction of Electron Shading Charge Build-up Using Pulsed Plasma
• High-Frequency Measurements of Plasma Parameters in Electron Cyclotron Resonance Plasma Etchers(Nuclear Science, Plasmas, and Electric Discharges)
• Evaluation of Charge Passed through Gate-Oxide Films Using a Charging Damage Measurement Electrode
• Production of highly uniform electron cyclotron resonance plasmas by distribution control of the microwave electric field
• Slant Slot Antenna-Type Electron Cyclotron Resonance Plasma Source
• Preparation of Multilayers by Alternate Cycles of Chemical Adsorption and Electron Beam Irradiation
• Electric Field Effect in LaTiO_3/SrTiO_3 Heterostructure
• Applicability of TiN Adhesion Layer Formed by Nitridation of Sputtered Ti Film to Blanket CVD-W Contact Filling
• P2-32 Load Characteristics of a Diagonally Symmetric Form Ultrasonic Motor Using a LiNbO_3 Plate(Poster session 2)
• Tunable Exchange Interaction in Quantum Dot Devices
• Quantum Chemical Calculations of Sulfur Doping Reactions in Diamond CVD
• Molecular Orbital Calculations of Sulfur Doping Reactions in Diamond CVD
• Computational Chemistry Study on Initial Stages of Nitridation of Silicon Surfaces
• Molecular Dynamics Simulations of Adhesional Forces via Hydrocarbon Films
• Nonlinear Susceptibility of Second Harmonic Generation Corresponded to the Diamond(100)Surface Structures
• Ferromagnetism in Semiconductor Dot Array
• Electric Field Effect in LaTiO_3/SrTiO_3 Heterostructure
• Thin Vibrator Alarm Using a Cantilever Piezoelectric Actuator
• Pt/PZT/n-SrTiO_3 Ferroelectric Memory Diode
• Enhancement of the Transport Critical Current Density by Electron Irradiation in a Bi_Pb_Sr_2Ca_2Cu_3O_x Ceramic
• Electron Irradiation Effects on the Transport Critical Current Density in a Bi_Pb_Sr_2Ca_2Cu_3O_x Ceramic
• Transport Critical Current Density in a Bi_PbSr_2Ca_2Cu_3O_ Ceramic
• Phenomenological Theory of Semiconductor Epitaxial Growth with Misfit-Dislocations
• Electron Irradiation Effects on Electrical Properties of a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
• Electron Irradiation Effects on a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
• Identification of Formation of Conically Converging Shock Waves in an Alumina-Sphere-Dispersed Copper Rod
• Anisotropic Heating of a Copper and Graphite Powder Mixture during an Electrical Column Explosion
• Characterization and Modification of Amorphous Carbon Films Consisting of sp^2 and sp^3 Bonds Using Magneto-Plasma Dynamic Arc-Jet
• Analysis of Two-Phase Path Management Scheme for MPLS Traffic Engineering
• A Study on a Position Measurement Method for Conduit Pipelines Using Cumulating Attitude
• P2-36 Basic Study On a Threefold Rotatory Symmetric Form Quartz Vibrator for Triaxial Gyrosensor(Poster session 2)
• Triaxial Quartz Gyrosensor Using a Threefold Rotatory Symmetric Form Vibrator
• Improved Emitter-Base Junction with In_2O_3 in Dielectric-Base Transistor
• Growth of Epitaxial CeO_2 Films on (1012) Sapphire by Halide Source Plasma Enhanced Chemical Vapor Deposition
• Tunnelling Spectroscopy of the Interface between Sr_2RuO_4 and a Single Ru Micro-Inclusion in Eutectic Crystals
• Tunneling Properties at the Interface between Superconducting Sr_2RuO_4 and a Ru Microinclusion(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• The Double-Sided Rugged Poly Si (DSR) Technology for High Density DRAMs
• Electrical and Crystallographic Properties of Sputtered-Pb(Zr,Ti)O_3 Films Treated by Rapid Thermal Annealing
• A Theoretical Investigation of the Potential for Infer-Surface Migration of Ga Adatoms between GaAs(001) and (111)B Surfaces
• A Method for Calculating Momentum Matrix Elements with Pseudopotentials
• Universal Theory of Si Oxidation Rate Taking Account of Interfacial Si Emission
• First-Principles Study of the Oxide Growth Process on Silicon Surfaces and at Silicon-Oxide/Silicon Interfaces
• Energy Saving Scheme with an Extra Active Period for LAN Switches
• 28a-Q-8 ac Effects in the Conductance of Mesoscopic Normal Metal-Superconductor Structures
• Coherent Cooper-Pair Tunneling in a Superconducting Single Electron Transistor
• Stable Microstructures on a GaAs(111)A Surface : the Smallest Unit for Epitaxial Growth
• Reflectance Difference Spectra Calculations of GaAs(001) As- and Ga-rich Reconstruction Surface Structures
• Electric Field Induced Recombination Centers in GaAs
• Magnetic Field Dependence of Critical Current Density in Superconducting Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O Films (Special Issue on High-Temperature Superconducting Electronics)
• Spectroscopic Evaluation on Photosensitive Langmuir Films Using Multichannel Spectrophotometer : Techniques, Instrumentations and Measurement
• Boron and Phosphorus Jon Emissions from a Cu-P-Pt-B Liquid Metal Ion Source
• Mass and Energy Analyses of Gallium-Indium Liquid-Metal-Ion Sources
• Development of Phosphorus Liquid-Metal-Ion Source
• Theoretical Investigation of the Adsorption Behavior of Si Adatoms on GaAs (001)-(2×4) Surfaces
• Electron Counting Monte Carlo Simulation of the Structural Change of the GaAs(001)-c (4×4) Surface during Ga Predeposition
• A Theoretical Inverstigation of Stable Lattice Sites for In Adatoms on GaAs(001)-(2×4) Surface
• Theoretical Investigations of Adsorption Behavior on GaAs(001) Surfaces
• Valence Band Offsets of the In_xGa_As/GaAs Strained-Layer Superlattice
• First Principle Calculation of the DX-Center Ground-States in GaAs,Al_xGa_As Alloys and AlAs/GaAs Superlattices
• Theoretical Studies on Electronic Structures of Polypeptide Chains
• A Theoretical Investigation of Migration Potentials of Ga Adatorms near Step Edges on GaAs(001)-c(4 × 4) Surface
• A New Slab Model Approach for Electronic Structure Calculation of Polar Semiconductor Surface
• Sound Field Characteristics in Air Gaps of Noncontact Ultrasonic Motor Driven by Two Flexural Standing Wave Vibration Disks
• Noncontact Ultrasonic Motor with Two Flexural Standing Wave Vibration Disks
• First-Principles Study on Electronic Structures of Protein Nanotubes
• Electronic Structures of Protein Nanotubes
• Optimum Design for Noncontact Ultrasonic Motor with Flexurally Vibrating Disk Using an Equivalent Circuit Considering Viscosity of Air
• Measurement of a Three-Dimensional Distribution of Microwave Electric Field in Electron Cyclotron Resonance Plasmas
• A Theoretical Investigation of Migration Potentials of Ga Adatoms near Kink and Step Edges on GaAs(001)-(2×4) Surface
• The Effect of Chlorine on Silicon Oxidation: Simulation based on the Interfacial Silicon Emission Model

もっと見る 閉じる

スポンサーリンク