Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-10-01
著者
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KAGESHIMA Hiroyuki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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Shiraishi K
Institute Of Physics University Of Tsukuba
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UEMATSU Masashi
NTT Basic Research Laboratories, NTT Corporation
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SHIRAISHI Kenji
NTT Basic Research Laboratories
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KAGESHIMA Hiroyuki
NTT LSI Laboratories
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Kageshima Hiroyuki
Ntt Basic Research Laboratories
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Uematsu M
Ntt Basic Research Laboratories Ntt Corporation
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Uematsu Masashi
Ntt Basic Research Laboratories
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Shiraishi K
Institute Of Physics Tsukuba University
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Shiraishi K
Japan Atomic Energy Res. Inst. Gunma Jpn
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Uematsu Masaya
NTT Basic Research Laboratories, NTT Corporation
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