Transient Enhanced Diffusion of Boron in the Presence of Dislocations Produced by Amorphizing Implantation in Silicon
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We have simulated transient enhanced diffusion (TED) of boron in the presence of dislocations produced by amorphizing implantation. A unified simulation was done, taking into account that end-of-range (EOR) dislocations act as both a sink for and source of self-interstitials, depending on temperature and annealing time. We have simulated B TED profiles both in regrown regions and beneath EOR dislocations produced by Si implantation at room temperature. Simulation results indicate that EOR dislocations do not act as a perfect barrier to self-interstitial diffusion. In addition, the simulation well reproduces the experimental profiles by taking into account another type of defect that maintain self-interstitial concentration at thermal equilibrium values in the regrown region.
- 社団法人応用物理学会の論文
- 1998-11-15
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