Simulation of High-Concentration Phosphorus Diffusion in Silicon Taking into Account Phosphorus Clustering and Pile-Up
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概要
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We have simulated the transient enhanced diffusion (TED) of high-concentration phosphorus (P) in silicon during postimplantation annealing. Based on the models for P diffusion, for TED by self-interstitial clusters, and for end-of-range (EOR) dislocations as both a sink for and source of self-interstitials, a unified simulation is done, taking into account P clustering and P pile-up. P clustering is taken into account only beneath EOR dislocations, and P pile-up is estimated by a diffusion-segregation term in the diffusion equations. We have satisfactorily fitted P depth profiles at high doses (〜10^<15> cm^<-2>) in a wide range of annealing conditions (700-1000℃).
- 社団法人応用物理学会の論文
- 1999-11-15
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