Transient Enhanced Diffusion and Deactivation of High-Dose Implanted Arsenic in Silicon
スポンサーリンク
概要
- 論文の詳細を見る
We have simulated the transient enhanced diffusion(TED)of high-concentration arsenic(As)in silicon during post-implantation annealing. A unified simulation was done, based on models for As diffusion, for TED by self-interstitial clusters, and for end-of-range(EOR)defects. We have taken into account As complex formation and As precipitation, which cause the As deactivation. We have satisfactorily fitted As depth profiles at high doses(1-5 × 10^15cm^-2)in a wide range of annealing conditions(750-1000℃). The As complex formation plays an important role in determining the diffusion profiles through the self-interstitial emission upon the formation at lower temperatures and through As deactivation at higher temperatures. The simulation results suggest that boron(B)segregation toward the As tail regions is associated with self-interstitial distributions determined by EOR defects and As profiles.
- 社団法人応用物理学会の論文
- 2000-03-15
著者
関連論文
- High-resolution RBS analysis of Si-dielectrics interfaces
- Microscopic Mechanism of Oxygen Transport during Thermal Silicon Oxidation
- Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl
- Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
- Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
- Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
- Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
- Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
- Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
- Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
- Simulation of High-Concentration Boron Diffusion in Silicon during Post-Implantation Annealing
- Transient Enhanced Diffusion of Boron in the Presence of Dislocations Produced by Amorphizing Implantation in Silicon
- Simulation of High-Concentration Phosphorus Diffusion in Silicon Taking into Account Phosphorus Clustering and Pile-Up
- Clustering and Transient Enhanced Diffusion of B Doping Superlattices in Silicon
- Transient Enhanced Diffusion and Deactivation of High-Dose Implanted Arsenic in Silicon
- Influence of Ostwald Ripening of End-of-Range Defects on Transient Enhanced Diffusion in Silicon
- Simulation of Clustering and Pile-Up during Post-Implantation Annealing of Phosphorus in Silicon
- Simulation of Boron Diffusion in High-Dose BF_2 Implanted Silicon
- Theoretical Investigation of Oxygen Diffusion in Compressively Strained High-Density $ \alpha $-Quartz
- Diffusion Model of Gallium in Single-Crystal ZnO Proposed from Analysis of Concentration-Dependent Profiles Based on the Fermi-Level Effect
- Effect of Nitrogen on Diffusion in Silicon Oxynitride
- The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2
- Effect of Si/SiO2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO2
- Simulation of High-Concentration Boron Diffusion in Silicon during Post-Implantation Annealing
- The Effect of Chlorine on Silicon Oxidation: Simulation based on the Interfacial Silicon Emission Model