Simulation of Clustering and Pile-Up during Post-Implantation Annealing of Phosphorus in Silicon
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We report on the simulation of the annealing behavior of medium dose (10^<13>-10^<14>cm^<-2>) implanted phosphorus in silicon. It is shown that the transient clustering of phosphorus has to be taken into account in order to achieve consistent simulation results. The pile-up of phosphorus at the silicon-silicondioxide interface is considered by including a diffusion-segregation term in the diffusion-reaction equations. We show how the phosphorus clustering impacts the phosphorus amount in the pile-up layer and compare the simulation results with available experimental data.
- 社団法人応用物理学会の論文
- 1999-01-15
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