Diffusion Model of Gallium in Single-Crystal ZnO Proposed from Analysis of Concentration-Dependent Profiles Based on the Fermi-Level Effect

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概要

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• Diffusion of gallium in single-crystal ZnO (implanted at 150 keV at a dose of $2\times 10^{16}$ cm-2) in the temperature range between 800 and 900 °C was investigated on the basis of experimentally measured and simulated profiles. The gallium concentration profiles have a characteristic tail with a constant-concentration region owing to the Fermi-level effect on the diffusion. The gallium concentration profiles were compared with the simulated profiles: both profiles are in good agreement. The simulation provides possible models for gallium diffusion based on the interstitialcy or vacancy mechanism.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-07-15

著者

• Haneda Hajime

  Sensor Materials Center National Institute For Materials Science

• Ikuhara Yuichi

  Institute Of Engineering Innovation School Of Engineering The University Of Tokyo

• SAKAGUCHI Isao

  Optronic Materials Center, National Institute for Materials Science

• OHASHI Naoki

  Optronic Materials Center, National Institute for Materials Science

• SATO Yoshiyuki

  NTT Advanced Technology Corporation

• Uematsu Masashi

  Ntt Basic Research Laboratories

• Haneda Hajime

  Sensor Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

• Nakagawa Tsubasa

  Institute of Engineering Innovation, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan

• Sakaguchi Isao

  Optronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

• Ikuhara Yuichi

  Institute of Engineering Innovation, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan

• IKUHARA Yuichi

  Institute of Engeering Innovation, School of Engineering, The University of Tokyo

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