TEM analysis of dislocation structures formed in the Cr-doped grain boundary of alumina
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概要
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An alumina bicrystal with a Cr-doped {1−100}/[0001] 2° low-angle tilt grain boundary was fabricated by diffusion bonding at elevated temperatures, and the microstructures around the grain boundary were observed by transmission electron microscopy. It was confirmed that an approximately 200 nm width Cr-rich secondary phase was formed along the grain boundary. Not only an array of triply dissociated dislocations was introduced along the grain boundary but also misfit dislocations were introduced along the heterointerface between the Cr-rich secondary phase and the alumina matrix. By observing the heterointerface from the < 1−100> direction which is perpendicular to the plane, it was found that all the misfit dislocations dissociate into partial dislocations. The dissociation width was several times larger than that in alumina {1−100} planes reported so far.
- 公益社団法人 日本セラミックス協会の論文
著者
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Shibata Naoya
Institute Of Engineering Innovation School Of Engineering The University Of Tokyo
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TOCHIGI Eita
Institute of Engineering Innovation, The University of Tokyo
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Ikuhara Yuichi
Institute Of Engineering Innovation School Of Engineering The University Of Tokyo
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KEZUKA Yuki
Institute of Engineering Innovation, The University of Tokyo
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IKUHARA Yuichi
Institute of Engeering Innovation, School of Engineering, The University of Tokyo
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