Zr segregation and associated Al vacancies in alumina grain boundaries

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概要

• 論文の詳細を見る

• Segregated dopants at grain boundary dramatically change the material’s mechanical and electrical properties. The knowledge of the behavior of these dopants are therefore key for further material developments. Here, a Zr doped alumina (Al2O3) bicrystal was fabricated and the atomic structure of the grain boundary was characterized using scanning transmission electron microscopy (STEM). Zr was found to segregate to specific sites along the grain boundary, which was neighbored by Al columns of weak image intensity. First principles calculations and static lattice calculations revealed that the charge compensating Al vacancies are most stable in Al columns neighboring the location of the Zr sites. Multi-slice simulations of STEM images confirmed that Al columns containing vacancies exhibit a reduction in image intensity. These results indicate that associated Al vacancies strongly influence its atomic site segregation behavior of Zr.

• 公益社団法人 日本セラミックス協会の論文

著者

• Abe Eiji

  Department Of Materials Engineering The University Of Tokyo

• Shibata Naoya

  Institute Of Engineering Innovation School Of Engineering The University Of Tokyo

• Mizoguchi Teruyasu

  Institute Of Engineering Innovation The University Of Tokyo

• Ikuhara Yuichi

  Institute Of Engineering Innovation School Of Engineering The University Of Tokyo

• Yamamoto Takahisa

  Institute Of Engineering Innovation The University Of Tokyo

• BUBAN James

  Institute of Engineering Innovation, The University of Tokyo

• IKUHARA Yuichi

  Institute of Engeering Innovation, School of Engineering, The University of Tokyo

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