Detecting Real Oxygen Ions in Polycrystalline Diamond Thin Film using Secondary Ion Mass Spectrometry
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概要
- 論文の詳細を見る
Oxygen in a polycrystalline diamond thin film grown by microwave-assisted chemical vapor deposition is evaluated by secondary ion mass spectrometry (SIMS). The depth profile of 16O measured as a function of the current density of a primary ion beam indicates a variation from a decrease in background intensity to an increase in oxygen intensity due to the signal from diamond. The oxygen concentration in a polycrystalline diamond thin film is $5\times 10^{-5}$ in 16O/13C. The method of analyzing the oxygen concentration in diamond is useful for developing diamond devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-06-15
著者
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Haneda Hajime
Sensor Materials Center National Institute For Materials Science
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Ikuhara Yuichi
Institute Of Engineering Innovation School Of Engineering The University Of Tokyo
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SAKAGUCHI Isao
Optronic Materials Center, National Institute for Materials Science
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OHASHI Naoki
Optronic Materials Center, National Institute for Materials Science
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Nakagawa Tsubasa
Institute of Engineering Innovation, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
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Ohashi Naoki
Optronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Ikuhara Yuichi
Institute of Engineering Innovation, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
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IKUHARA Yuichi
Institute of Engeering Innovation, School of Engineering, The University of Tokyo
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