Atomic Structure and Relaxation Behavior at AlN(0001)/Al_2O_3(0001) Interface(Characterization,<Special Issue>Guest Editors Dedicated to Prof. Gunter Petzow: Modern Trends in Advanced Ceramics)

スポンサーリンク

概要

• 論文の詳細を見る

• The atomic structure of AlN(0001)/Al_2O_3(0001) interface, which is a model of a large lattice-mismatched film/substrate interface, was investigated by using static lattice calculations. Detailed analysis of the calculated structure revealed that the atomic relaxation behavior strongly depends on local atomic configurations of the interface. Interface distance became larger when Al atoms of AlN side and O atoms of Al_2O_3 side at the interface are in on-top configurations, while it became smaller when they are not in on-top configurations. The calculated structure qualitatively reproduced the experimental high-resolution transmission electron microscopy(HRTEM) image, which was obtained in our previous study. Such varieties of the atomic relaxation can be concluded to play one of the important roles for the formation of stable hetero-interface structures.

• 2006-11-01

著者

• 幾原 雄一

  ファインセラミックスセンター:東大総研:東北大wpi

• MIZOGUCHI Teruyasu

  Institute of Engineering Innovation, University of Tokyo

• 山本 剛久

  Institute Of Engineering Innovation School Of Engineering The University Of Tokyo

• Sato Yukio

  Department Of Internal Medicine Ii Fukushima Medical University School Of Medicine Fukushima 960-129

• YAMAMOTO Takahisa

  Department of Advanced Materials Science, Graduate School of Frontier Science, The University of Tok

• IKUHARA Yuichi

  Institute of Engineering Innovation, University of Tokyo

• Shibata Naoya

  Institute Of Engineering Innovation School Of Engineering The University Of Tokyo

• Sato Yukio

  Department Of Advanced Materials Science Graduate School Of Frontier Science The University Of Tokyo

• TOKUMOTO Yuki

  Department of Advanced Materials Science, Graduate School of Frontier Science, The University of Tok

• Mizoguchi Teruyasu

  Institute Of Engineering Innovation The University Of Tokyo

• Yamamoto Takahisa

  Department Of Advance Materials Science School Of Frontier Sciences The University Of Tokyo

• Yamamoto Takahisa

  Department Of Advanced Materials Science Graduate School Of Frontier Sciences University Of Tokyo

• Ikuhara Yuichi

  Institute Of Engineering Innovation School Of Engineering The University Of Tokyo

• Tokumoto Yuki

  Department Of Advanced Materials Science Graduate School Of Frontier Science The University Of Tokyo

• Ikuhara Yuichi

  World Premier International Research Center Advanced Institute For Materials Research Tohoku Univers

• IKUHARA Yuichi

  Institute of Engeering Innovation, School of Engineering, The University of Tokyo

関連論文

• 21pGE-16 スピネル型LiNi_2O_4における電荷軌道整列相の第一原理計算(21pGE パイロクロア・フラストレーション系,領域8(強相関系:高温超伝導,強相関f電子系など))
• Theoretical Investigation of Al K-edge X-ray Absorption Spectra of Al, AlN and Al_2O_3
• Growth and Microstructure of Epitaxial Ti3SiC2 Contact Layers on SiC
• 特集「電子顕微鏡法による材料開発のための微細構造研究最前線(6)の企画にあたって
• 誘電体TiO2/SrTiO3ヘテロ界面の構造と電子状態 (特集 機能元素のナノ材料科学)
• ZnO中の傾角粒界の原子構造
• HRTEM による Cu/α-Al_2O_3(0001) 界面の原子構造解析(セラミック材料)
• はじめに「機能元素のナノ材料科学」の意義と今後の展開
• 収差補正走査透過電子顕微鏡法を用いた界面研究の新展開
• セラミックスの微細構造観察法 : 透過電子顕微鏡法を中心に
• 第11回材料科学における電子顕微鏡最前線国際会議
• 銅/グラファイト界面の化学結合状態に対する添加元素効果
• 先端的透過型電子顕微鏡法と理論計算の融合による新しい材料開発
• n型半導体SrTiO3単一粒界素子の粒界構造と電気的特性 (特集 原子・電子レベルからの材料界面設計)
• Non-linear Current-Voltage Property across Σ5(210) Symmetric Tilt Boundary in Nb-Doped SrTiO_3 Bicrystal
• Current-Voltage Characteristics Across Small Angle Symmetric Tilt Boundaries in Nb-Doped SrTiO_3 Bicrystals
• 半導性 SrTiO_3 双結晶において形成された Co 化学界面の電気的特性
• Electron transport behaviour in Nb-doped SrTiO_3 bicrystals
• STEMによるLaドープSrTiO_3人工超格子薄膜の原子構造解析
• 特集「顕微鏡法による材料開発のための微細構造研究最前線(9)」 : -先端顕微鏡法開発がもたらす材料科学の新たな展開-企画にあたって
• First Principles Study of Core-hole Effect on Fluorine K-edge X-ray Absorption Spectra of MgF_2 and ZnF_2
• 複層鋼板における異種鋼板接合界面のSTEM-EDS観察
• BaZrO_3 バッファー層による MgO 基板上 SmBa_2Cu_3O_y 膜の面内配向性向上機構
• MGC材料の高温変形 (特集 新しい超耐熱材料--MGC材料の開発最前線(上))
• TZPの高温延性に及ぼすGeO_2-NdO_複合添加効果
• GeO_2-doping Dependence of High Temperature Superplastic Behavior in 3Y-TZP
• 電子セラミックスの粒界構造と電気的特性
• セラミックスの粒界構造と高温力学特性
• 高温セラミックスの粒界構造と化学結合状態
• 位相コントラストによる超高分解能元素マッピング
• 原子直視による GaN 界面の観察
• FeTiO_3-Fe_2O_3固溶体薄膜における秩序構造および逆位相境界の直接観察
• セラミックスの粒界偏析のSTEM直接観察
• アルミナ小傾角粒界に形成された特異部分転位構造のTEM解析
• ナノ機能元素の超微細構造解析
• 最近の研究と技術 走査型透過電子顕微鏡法による界面・表面の研究
• アルミナ粒界におけるY偏析サイトのSTEM観察
• ジルコニア〓9粒界の周期ユニット構造
• 傾角66°の[001]対称傾角粒界を有するルチル型TiO_2双結晶の粒界原子構造
• Critical Current Density-Magnetic Field Curve for Untwinned Orthorhombic Nd_Ba_Cu_3O_ Single Crystal and Its Microstructure
• Oxygen Adsorption on Anatase TiO_2 (101) and (001) Surfaces from First Principles
• 界面・粒界研究の新展開 : 企画にあたって
• Al/Al-Si Nano-Composite Graded Coating Prepared by Supersonic Free-Jet PVD
• Ti-Al, Graded Al/AlTi, and Ti-Al-N Coatings Prepared by Supersonic Free-Jet PVD
• Graded TiN Coating by Supersonic Free-Jet PVD Combined with Reactive Plasma
• Formation, Thermal Stability, Mechanical Properties and Corrosion Resistance of Cu-Zr-Ti-Ni-Nb Bulk Glassy Alloys
• ZnOにおける不純物偏析および電気特性の粒界依存性
• Oxygen Pipe Diffusion in Sapphire Basal Dislocation(Characterization,Guest Editors Dedicated to Prof. Gunter Petzow: Modern Trends in Advanced Ceramics)
• Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
• Atomic and Electronic Structures of Ni/YSZ(111) Interface
• 金属/セラミックス界面 : 第一原理計算を用いたELNESおよび化学結合の解析
• MOD-TFA法によるY123超電導膜の成長機構
• Nb添加SrTiO_3双結晶の粒界構造と電気的特性
• 転位構造制御によるサファイア中への導電性ナノ細線形成
• 電子エネルギー損失分光(EELS)と第一原理計算を組み合わせた原子・電子構造解析
• 球面収差補正走査透過型電子顕微鏡法による材料解析 (特集 ファインセラミックス開発の新展開--JFCCは今)
• ELNESと理論計算を組み合わせた結晶界面の原子・電子構造解析
• Formation of Protection Layer during Oxidation of Al-Implanted TiN Coating
• High Temperature Deformation Behavior of [0001] Symmetrical Tilt Σ7 and Σ21 Grain Boundaries in Alumina Bicrystals
• First-Principles Characterization of Atomic Structure of Al_2O_3(0001)/Cu Nano-Hetero Interface
• Structure of [110] tilt grain boundaries in zirconia bicrystals
• A new method for preparing plan-view TEM specimen of multilayered films using focused ion beam
• Formation, Thermal Stability and Mechanical Properties of (Cu_Zr_Ti_)_M_x (M=Fe, Co, Ni) Bulk Glassy Alloys
• アルミナ双結晶の粒界構造と高温変形挙動
• Thermoelectric Properties of the Layered Cobaltite Ca_3Co_4O_9 Epitaxial Films Fabricated by Topotactic Ion-Exchange Method
• Atomic Structure and Relaxation Behavior at AlN(0001)/Al_2O_3(0001) Interface(Characterization,Guest Editors Dedicated to Prof. Gunter Petzow: Modern Trends in Advanced Ceramics)
• Dilute Ga Dopant in TiO_2 by X-ray Absorption Near-Edge Structure
• X-ray Absorption Near Edge Structures of Silicon Nitride Thin Film by Pulsed Laser Deposition
• First-principles Calculation of L_3 X-ray Absorption Near Edge Structures (XANES) and Electron Energy Loss Near Edge Structures (ELNES) of GaN and InN Polymorphs
• その場観察によるYSZの破壊過程の直接観察
• First Principles Calculations of Vacancy Formation Energies in *13 Pyramidal Twin Grain Boundary of α-Al_2O_3
• Structure and Configuration of Boundary Dislocations on Low Angle Tilt Grain Boundaries in Alumina
• First Principles Study on Intrinsic Vacancies in Cubic and Orthorhombic CaTiO_3
• Transmission Electron Microscopy Study of Sn-Doped Sintered Indium Oxide
• アルミナにおける対称傾角粒界の局所ひずみと原子構造
• 電子エネルギー損失スペクトルを用いたCu/Al_2O_3(0001)界面の局所化学結合状態解析
• セラミックス破壊の微視的観察と原子論的メカニズム
• TEM内その場観察法による窒化ケイ素の粒内破壊に伴う亀裂進展経路の同定
• イットリア安定化正方晶ジルコニア多結晶体の粒界偏析誘起相変態
• 転位配列制御によるナノ細線設計
• Grain Boundary Energy and Tensile Ductility in Superplastic Cation-doped TZP
• High Resolution Microscopy Study for [001] Symmetric Tilt Boundary with a Tilt Angle of 66゜in Rutile-type TiO_2 Bicrystal
• The study of AI-L_23 ELNES with resolution-enhancement software and first-principles calculation
• 環状明視野(ABF)STEM法の理論と応用
• Electric-Field Modulation of Thermopower for the KTaO_3 Field-Effect Transistors
• Local Bonding States of Titanium and Germanium-doped Tetragonal Zirconia Polycrystal and Their Correlation to High Temperature Ductility
• 3Y-TZP粉末の内部構造とY_2O_3の濃度分布
• Study on atomic and electronic structures of ceramic materials using spectroscopy, microscopy, and first principles calculation
• Internal Friction Behavior of Alumina Polycrystals with Engineered Grain Boundaries
• 121 収束電子線回折法によるアルミナ双結晶界面の高精度ひずみ測定(信頼性手法・評価)(先進材料開発と信頼性設計・評価)(オーガナイスドセッション7)
• Effect of Chemical Bonding State on High-temperature Plastic Flow Behavior in Fine-grained, Polycrystalline Cation-doped Al_2O_3
• Grain Boundary Sliding and Atomic Structures in Alumina Bicrystals with [0001] Symmetric Tilt Grain Boundaries
• Direct Imaging of Hydrogen within a Crystalline Environment
• Effects of Dislocations on the Oxygen Ionic Conduction in Yttria Stabilized Zirconia
• Identification of crack path of inter- and transgranular fractures in sintered silicon nitride by in situ TEM
• Imprity Effects on Grain Boundary Strength in Structural Ceramics
• Structure and Chemistry of Grain Boundaries in SiO2-doped TZP
• OS8(1)-3(OS08W0163) Measurement of Lattice Defect and Local Strain in Polished Sapphire by Transmission Electron Microscopy
• 粒界・界面の観察と解析(II)
• ジルコニアセラミックスにおける微細組織形成過程とその制御 (特集 NIMSプロジェクト : 新材料創出を可能にする粒子プロセスの開発と応用(2))

もっと見る 閉じる

スポンサーリンク