Analysis of Indium Diffusion Profiles Based on the Fermi-Level Effect in Single-Crystal Zinc Oxide

スポンサーリンク

概要

• 論文の詳細を見る

• The diffusion of indium in single-crystal ZnO was studied by an ion implantation technique (accelerating voltage of 170 keV and dose of $1\times 10^{16}$ cm-2) in the temperature range between 750 and 850 °C. The indium profiles have a characteristic tail with a constant concentration region due to the Fermi-level effect on the diffusion. The simulated profiles of indium diffusion in ZnO fitted well with the experimentally determined profiles. We propose a possible models for indium diffusion based on an interstitialcy mechanism or a vacancy mechanism.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-10-25

著者

• Haneda Hajime

  Sensor Materials Center National Institute For Materials Science

• SAKAGUCHI Isao

  Optronic Materials Center, National Institute for Materials Science

• OHASHI Naoki

  Optronic Materials Center, National Institute for Materials Science

• MATSUMOTO Kenji

  Sensor Materials Center, National Institute for Materials Science

• Nakagawa Tsubasa

  Optronic Materials Center National Inst. For Materials Sci.

• Haneda Hajime

  Sensor Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

• Nakagawa Tsubasa

  Optronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

• Uematsu Masashi

  Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama 223-8522, Japan

• Sakaguchi Isao

  Optronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

関連論文

• AFM and TEM observations of α-helix to β-sheet conformational change occurring on carbon nanotubes
• Oxygen Pipe Diffusion in Sapphire Basal Dislocation(Characterization,Guest Editors Dedicated to Prof. Gunter Petzow: Modern Trends in Advanced Ceramics)
• Effect of post-annealing on structural and optical properties, and elemental distribution in heavy Eu-implanted ZnO thin films
• First Principles Calculations of Vacancy Formation Energies in *13 Pyramidal Twin Grain Boundary of α-Al_2O_3
• Growth of Thick Zinc Magnesium Oxide by Liquid Phase Epitaxy
• Ion implantation and diffusion behavior of silver in zinc oxide
• Development of ZnO-based surface plasmon resonance gas sensor and analysis of UV irradiation effect on NO2 desorption from ZnO thin films
• Diffusion Model of Gallium in Single-Crystal ZnO Proposed from Analysis of Concentration-Dependent Profiles Based on the Fermi-Level Effect
• Analysis of Indium Diffusion Profiles Based on the Fermi-Level Effect in Single-Crystal Zinc Oxide
• Stress Dependence of Oxidation Reaction at SiO2/Si Interfaces during Silicon Thermal Oxidation
• Detecting Real Oxygen Ions in Polycrystalline Diamond Thin Film using Secondary Ion Mass Spectrometry

もっと見る 閉じる

スポンサーリンク