Haneda Hajime | Sensor Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

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概要

• Haneda Hajimeの詳細を見る
• 同名の論文著者
• Sensor Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japanの論文著者

関連著者

• Haneda Hajime

  Sensor Materials Center National Institute For Materials Science

• SAKAGUCHI Isao

  Optronic Materials Center, National Institute for Materials Science

• OHASHI Naoki

  Optronic Materials Center, National Institute for Materials Science

• Haneda Hajime

  Sensor Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

• Sakaguchi Isao

  Optronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

• Ikuhara Yuichi

  Institute Of Engineering Innovation School Of Engineering The University Of Tokyo

• SATO Yoshiyuki

  NTT Advanced Technology Corporation

• Uematsu Masashi

  Ntt Basic Research Laboratories

• MATSUMOTO Kenji

  Sensor Materials Center, National Institute for Materials Science

• Nakagawa Tsubasa

  Optronic Materials Center National Inst. For Materials Sci.

• Nakagawa Tsubasa

  Institute of Engineering Innovation, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan

• Nakagawa Tsubasa

  Optronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

• Uematsu Masashi

  Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama 223-8522, Japan

• Ikuhara Yuichi

  Institute of Engineering Innovation, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan

• IKUHARA Yuichi

  Institute of Engeering Innovation, School of Engineering, The University of Tokyo

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著作論文

• Diffusion Model of Gallium in Single-Crystal ZnO Proposed from Analysis of Concentration-Dependent Profiles Based on the Fermi-Level Effect
• Analysis of Indium Diffusion Profiles Based on the Fermi-Level Effect in Single-Crystal Zinc Oxide

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