Uematsu Masashi | Ntt Basic Research Laboratories
スポンサーリンク
概要
関連著者
-
Uematsu Masashi
Ntt Basic Research Laboratories
-
Kageshima Hiroyuki
Ntt Basic Research Laboratories
-
UEMATSU Masashi
NTT Basic Research Laboratories, NTT Corporation
-
KAGESHIMA Hiroyuki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
-
Shiraishi K
Institute Of Physics University Of Tsukuba
-
SHIRAISHI Kenji
NTT Basic Research Laboratories
-
KAGESHIMA Hiroyuki
NTT LSI Laboratories
-
Uematsu M
Ntt Basic Research Laboratories Ntt Corporation
-
Uematsu Masaya
NTT Basic Research Laboratories, NTT Corporation
-
Shiraishi K
Institute Of Physics Tsukuba University
-
Shiraishi K
Japan Atomic Energy Res. Inst. Gunma Jpn
-
Shiraishi Kenji
Institute Of Physics University Of Tsukuba
-
Itoh Kohei
Department Of Applied Physics And Physico-informatics And Crest-jst Keio University
-
SHIRAISHI Kenji
Institute of Physics, University of Tsukuba
-
Fukatsu Shigeto
Department Of Applied Physics And Physico-informatics And Crest-jst Keio University
-
Takahashi Yasuo
Ntt Basic Research Laboratories Ntt Corporation
-
Itoh Kohei
Department of Applied Physics and CREST-JST, Keio University, Yokohama 223-8522, Japan
-
Nakajima Kaoru
Dep. Of Micro Engineering Kyoto Univ.
-
CHIKYOW Toyohiro
National Institute for Mateirals Science
-
Zhao Ming
Department of Oral Pathology, Faculty of Dentistry, Hiroshima University
-
SUZUKI Motofumi
Department of Global Agricultural Sciences, Graduate School of Agricultural and Life Sciences
-
Akiyama Toru
Dept. Of Physics Engineering Mie Univ.
-
Akiyama Toru
Department Of Orthopaedic Surgery Faculty Of Medicine The University Of Tokyo
-
Kimura Kenji
Department of Engineering Science, Kyoto University
-
NARA Yasuo
Semiconductor Leading Edge Technologies, Inc.
-
TORII Kazuyoshi
Semiconductor Leading Edge Technologies, Inc.
-
Kimura Kenji
Dep. Of Micro Engineering Kyoto Univ.
-
NAKAJIMA Kaoru
Department of Micro Engineering, Kyoto University
-
KAMIYAMA Satoshi
Semiconductor Leading Edge Technologies, Inc.
-
WATANABE Heiji
Department of Precision Science and Technology, Osaka University
-
YAMADA Keisaku
Nanotechnology Research Laboratories, Waseda University
-
Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
-
Fujiwara Akira
Ntt Basic Research Laboratories Ntt Corporation
-
Kamiyama Satoshi
Semiconductor Leading Edge Technologies Inc.
-
Ito Tomonori
Department Of Chemical And Biochemical Engineering Faculty Of Engineering Toyama University
-
ITO Tomonori
Dept. of Physics Engineering, Mie Univ.
-
YAMABE Kikuo
Univ. of Tsukuba
-
SHIRAISHI Kenji
Univ. of Tsukuba
-
YAMADA Keisaku
Waseda Univ.
-
Yamamoto K
Univ. Of Tsukuba
-
Takahashi Tomonori
Department Of Applied Physics And Physico-informatics And Crest-jst Keio University
-
Yamamoto K
Kaneka Corporation
-
Kimura Kenji
Department Of Micro Engineering Kyoto University
-
Nakamura Kunio
Department Of Micro Engineering Kyoto University
-
Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
-
Ito Tomonori
Dept. Of Physics Engineering Mie Univ.
-
Haneda Hajime
Sensor Materials Center National Institute For Materials Science
-
Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
-
Ikuhara Yuichi
Institute Of Engineering Innovation School Of Engineering The University Of Tokyo
-
SAKAGUCHI Isao
Optronic Materials Center, National Institute for Materials Science
-
OHASHI Naoki
Optronic Materials Center, National Institute for Materials Science
-
SATO Yoshiyuki
NTT Advanced Technology Corporation
-
Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
-
Zhao Ming
Department Of Micro Engineering Kyoto University
-
Nakajima Kaoru
Department Of Engineering Physics And Mechanics Kyoto University
-
Yamamoto K
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
-
Suzuki Motofumi
Department Of Micro Engineering Kyoto University
-
Suzuki Motofumi
Department Of Global Agricultural Sciences Graduate School Of Agricultural And Life Science The Univ
-
Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
-
Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
-
Zhao Ming
Department Of Dermatology Epigenetic Research Center Second Xiangya Hospital Central South Universit
-
Chikyow Toyohiro
National Inst. Materials Sci. Ibaraki Jpn
-
Uematsu Masashi
Ntt Basic Research Laboratories Ntt Corporation
-
SCHROER Erwin
NTT System Electronics Laboratories
-
Kimura Kenji
Deparment Of Engineering Science Kyoto University
-
Haneda Hajime
Sensor Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
-
Nakagawa Tsubasa
Institute of Engineering Innovation, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
-
Kageshima Hiroyuki
NTT Basic Research Laboratories, NTT Corporation, Atsugi 243-0198, Japan
-
Kageshima Hiroyuki
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
-
Takahashi Tomonori
Department of Applied Physics and Physico-Informatics and CREST-JST, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
-
Uematsu Masashi
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Uematsu Masashi
NTT Basic Research Laboratories, NTT Corporation, Atsugi 243-0198, Japan
-
Uematsu Masashi
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Ito Tomonori
Department of Physics Engineering, Mie University, 1515 Kamihama, Tsu 514-8507, Japan
-
Sakaguchi Isao
Optronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
-
Shiraishi Kenji
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Shiraishi Kenji
Institute of Physics, University of Tsukuba, Tsukuba 305-8571, Japan
-
Ikuhara Yuichi
Institute of Engineering Innovation, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
-
Itoh Kohei
Department of Applied Physics and Physico-Informatics and CREST-JST, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
-
IKUHARA Yuichi
Institute of Engeering Innovation, School of Engineering, The University of Tokyo
-
Uematsu Masashi
NTT Basic Research Laboratories, 3-1, Morinosato Wakamiya,
-
Suzuki Motofumi
Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
-
Shiraishi Kenji
Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577, Japan
著作論文
- High-resolution RBS analysis of Si-dielectrics interfaces
- Microscopic Mechanism of Oxygen Transport during Thermal Silicon Oxidation
- Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl
- Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
- Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
- Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
- Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
- Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
- Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
- Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
- Simulation of High-Concentration Boron Diffusion in Silicon during Post-Implantation Annealing
- Transient Enhanced Diffusion of Boron in the Presence of Dislocations Produced by Amorphizing Implantation in Silicon
- Simulation of High-Concentration Phosphorus Diffusion in Silicon Taking into Account Phosphorus Clustering and Pile-Up
- Clustering and Transient Enhanced Diffusion of B Doping Superlattices in Silicon
- Transient Enhanced Diffusion and Deactivation of High-Dose Implanted Arsenic in Silicon
- Influence of Ostwald Ripening of End-of-Range Defects on Transient Enhanced Diffusion in Silicon
- Simulation of Clustering and Pile-Up during Post-Implantation Annealing of Phosphorus in Silicon
- Simulation of Boron Diffusion in High-Dose BF_2 Implanted Silicon
- Theoretical Investigation of Oxygen Diffusion in Compressively Strained High-Density $ \alpha $-Quartz
- Diffusion Model of Gallium in Single-Crystal ZnO Proposed from Analysis of Concentration-Dependent Profiles Based on the Fermi-Level Effect
- Effect of Nitrogen on Diffusion in Silicon Oxynitride
- The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2
- Effect of Si/SiO2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO2
- Simulation of High-Concentration Boron Diffusion in Silicon during Post-Implantation Annealing
- The Effect of Chlorine on Silicon Oxidation: Simulation based on the Interfacial Silicon Emission Model