Simulation of High-Concentration Boron Diffusion in Silicon during Post-Implantation Annealing
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概要
- 論文の詳細を見る
We have simulated the transient enhanced diffusion (TED) and electricalactivation of high-concentration boron (B) in silicon duringpost-implantation annealing. Based on the models for B diffusion, for TEDby self-interstitial clusters, and for B clustering, a unified simulationis done, taking into account implantation-induced dislocations as a sinkfor self-interstitials and the solid solubility limit of B. To establishthe initial profiles for higher doses, we used the maximum area density ofself-interstitials and B concentration effective for the TED and Bclustering. We have satisfactorily fitted B depth profiles at differentdoses (5×1014–5×1015 cm-2) in a wide range of experimental conditions(800–1000°C and 10 s–8 h).
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1999-06-15
著者
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Uematsu Masashi
Ntt Basic Research Laboratories
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Uematsu Masashi
NTT Basic Research Laboratories, 3-1, Morinosato Wakamiya,
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