Theoretical Investigation of Oxygen Diffusion in Compressively Strained High-Density $ \alpha $-Quartz
スポンサーリンク
概要
- 論文の詳細を見る
The microscopic mechanisms of oxygen diffusion in compressively strained high-density $ \alpha $-quartz are investigated on the basis of first-principles total-energy calculations. It is found that both the incorporation energy of oxygen into SiO2 and the energy barrier for its diffusion are dependent on the density of SiO2. The activation energies show that molecular-type oxygen is the dominant diffusion species over the entire density range. Furthermore, the activation volumes estimated from the results of the present first-principles calculations imply the retardation of oxygen diffusion in the high-density region.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-10-15
著者
-
Akiyama Toru
Department Of Orthopaedic Surgery Faculty Of Medicine The University Of Tokyo
-
Ito Tomonori
Department Of Chemical And Biochemical Engineering Faculty Of Engineering Toyama University
-
Kageshima Hiroyuki
Ntt Basic Research Laboratories
-
Uematsu Masashi
Ntt Basic Research Laboratories
-
Uematsu Masashi
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Ito Tomonori
Department of Physics Engineering, Mie University, 1515 Kamihama, Tsu 514-8507, Japan
関連論文
- Juxtacortical chondroma of the sacrum
- Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
- High-resolution RBS analysis of Si-dielectrics interfaces
- RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
- Empirical Potential Approach to the Formation of 3C-SiC/Si(110)
- Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
- Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
- An Empirical Potential Approach to Wurtzite-Zinc-Blende Polytypism in Group III-V Semiconductor Nanowires
- Microscopic Mechanism of Oxygen Transport during Thermal Silicon Oxidation
- Theoretical Study of Excess Si Emitted from Si-oxide/Si Interfaces
- Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl
- Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
- Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
- Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
- Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
- Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
- Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
- Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
- Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
- Electrolyte-promoted Easy Separation of Suspended TiO_2 Particles with a Solids Retaining Type Centrifuge in Combination with Photoreactor to Degrade Dibutyl Phthalate
- A TiO_2-Suspended Continuous Flow Photoreactor System Combined with the Separation of TiO_2 Particles by Coagulation for the Photocatalytic Degradation of Dibutyl Phthalate
- Contact Conductance Measurement of Locally Suspended Graphene on SiC
- Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
- Tight-Binding Approach to Initial Stage of the Graphitization Process on a Vicinal SiC Surface
- Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
- Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Magnetism of Single-Walled Carbon Nanotube with Pd Nanowire(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- A Theoretical Investigation of the Potential for Infer-Surface Migration of Ga Adatoms between GaAs(001) and (111)B Surfaces
- A Method for Calculating Momentum Matrix Elements with Pseudopotentials
- Universal Theory of Si Oxidation Rate Taking Account of Interfacial Si Emission
- First-Principles Study of the Oxide Growth Process on Silicon Surfaces and at Silicon-Oxide/Silicon Interfaces
- Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface
- Stability of Carbon Incorpoated Semipolar GaN($1\bar{1}01$) Surface
- Stable Microstructures on a GaAs(111)A Surface : the Smallest Unit for Epitaxial Growth
- Simulation of High-Concentration Boron Diffusion in Silicon during Post-Implantation Annealing
- Transient Enhanced Diffusion of Boron in the Presence of Dislocations Produced by Amorphizing Implantation in Silicon
- Simulation of High-Concentration Phosphorus Diffusion in Silicon Taking into Account Phosphorus Clustering and Pile-Up
- Clustering and Transient Enhanced Diffusion of B Doping Superlattices in Silicon
- Transient Enhanced Diffusion and Deactivation of High-Dose Implanted Arsenic in Silicon
- Influence of Ostwald Ripening of End-of-Range Defects on Transient Enhanced Diffusion in Silicon
- Simulation of Clustering and Pile-Up during Post-Implantation Annealing of Phosphorus in Silicon
- Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001) (Special Issue : Solid State Devices and Materials (1))
- Stability and Indium Incorporation Processes on In0.25Ga0.75N Surfaces under Growth Conditions: First-Principles Calculations
- Simulation of Boron Diffusion in High-Dose BF_2 Implanted Silicon
- Reconstructions on AlN Polar Surfaces under Hydrogen Rich Conditions
- Sugar consumption and ethanol fermentation by transporter-overexpressed xylose-metabolizing Saccharomyces cerevisiae harboring a xyloseisomerase pathway(BIOCHEMICAL ENGINEERING)
- Reconstructions on AlN Nonpolar Surfaces in the Presence of Hydrogen
- Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon
- Theoretical Investigation of Oxygen Diffusion in Compressively Strained High-Density $ \alpha $-Quartz
- Ab initio-Based Study for Adatom Kinetics on Semipolar GaN($11\bar{2}2$) Surfaces
- First-Principles Analyses of O2 Molecules around Ultrathin SiO2/Si(100) Interface
- Reconstructions of GaN and InN Semipolar ($10\bar{1}\bar{1}$) Surfaces
- Surface Reconstructions on GaN and InN Semipolar ($11\bar{2}2$) Surfaces
- Diffusion Model of Gallium in Single-Crystal ZnO Proposed from Analysis of Concentration-Dependent Profiles Based on the Fermi-Level Effect
- Effect of Nitrogen on Diffusion in Silicon Oxynitride
- Study on Thermoelectric Properties of Graphene
- The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2
- Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio
- Stress Dependence of Oxidation Reaction at SiO2/Si Interfaces during Silicon Thermal Oxidation
- Influence of Lattice Constraint from InN and GaN Substrate on Relationship between Solid Composition of InxGa1-xN Film and Input Mole Ratio during Molecular Beam Epitaxy
- An Empirical Interatomic Potential Approach to Structural Stability of ZnS and ZnSe Nanowires
- Effects of Facet Orientation on Relative Stability between Zinc Blende and Wurtzite Structures in Group III–V Nanowires
- Oxygen Trap Hypothesis in Silicon Oxide
- Theoretical Investigation of Effect of Side Facets on Adsorption--Desorption Behaviors of In and P Atoms at Top Layers in InP Nanowires
- AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy
- Effect of Si/SiO2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO2
- Transport Mechanism of Interfacial Network Forming Atoms during Silicon Oxidation
- Origin of Schottky Barrier Modification by Hydrogen on Diamond
- Sugar consumption and ethanol fermentation by transporter-overexpressed xylose-metabolizing Saccharomyces cerevisiae harboring a xyloseisomerase pathway
- First-Principles Calculations of Uniaxial Strain Effects on Manganese in Silicon
- Simulation of High-Concentration Boron Diffusion in Silicon during Post-Implantation Annealing
- AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
- Charge-Injection Effects in a Single 4,4$''$-Terphenyldithiol Molecule
- The Effect of Chlorine on Silicon Oxidation: Simulation based on the Interfacial Silicon Emission Model
- Simple Systematization of Structural Stability for ANB8-N Compounds
- Stability of Magnesium-Incorporated Semipolar GaN($10\bar{1}\bar{1}$) Surfaces
- Surface Reconstructions on GaN and InN Semipolar ($20\bar{2}1$) Surfaces
- Quantum Hall Effect and Carrier Scattering in Quasi-Free-Standing Monolayer Graphene
- Neoadjuvant and adjuvant chemotherapy with modified mesna, adriamycin, ifosfamide, and dacarbazine (MAID) regimen for adult high-grade non-small round cell soft tissue sarcomas
- Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio