Tight-Binding Approach to Initial Stage of the Graphitization Process on a Vicinal SiC Surface

スポンサーリンク

概要

• 論文の詳細を見る

• We study the process of growth of graphene by the SiC surface decomposition method to improve the technique of growing graphene. In this study, the initial stage of the graphitization process on a periodically faceted SiC surface is investigated by the Naval Research Laboratory tight-binding approach. The results suggest that the decomposition of the SiC surface started by the desorption of Si atoms at the step edge. It is also found that released C atoms are trapped at the step-edge sites and that neighboring Si atoms are subsequently desorbed. These results suggest that graphene nucleation on the SiC surface proceeds in a negative step-flow mode.

• 2011-03-25

著者

• Kakimoto Koichi

  Research Instittue For Applied Mechanics Kyushu University

• Kageshima Hiroyuki

  Ntt Basic Research Laboratories

• Wakabayashi Katsunori

  International Center for Materialas Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

• Wakabayashi Katsunori

  International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

• Kangawa Yoshihiro

  Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• INOUE Masato

  Deparatment of Occupational Health, Graduate School of Medicine, Gifu University

• Inoue Masato

  Department of Aeronautics and Astronautics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

関連論文

• Neurons in the macaque orbitofrontal cortex code relative preference of both rewarding and aversive outcomes
• Analysis Method Combining Monte Carlo Simulation and Principal Component Analysis : Application to Sourlas Code(General)
• Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
• 横磁場印加シリコンCZ炉内の熱流体解析(Si系単結晶・多結晶)
• Numerical analysis of impurity transport in a unidirectional solidification furnace for multicrystalline silicon (特集 太陽電池材料の結晶工学--結晶成長を中心に)
• RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
• Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon(Condensed Matter: Structure, Mechanical and Thermal Properties)
• Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
• Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
• Microscopic Mechanism of Oxygen Transport during Thermal Silicon Oxidation
• Theoretical Study of Excess Si Emitted from Si-oxide/Si Interfaces
• Grouping preprocess to accurately extend application of EM algorithm to haplotype inference
• Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl
• Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
• Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
• Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
• Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
• Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
• Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
• Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
• Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
• Contact Conductance Measurement of Locally Suspended Graphene on SiC
• Characterization of mRNA Expression of IκBα and NF-κB Subfamilies in Primary Adult T-cell Leukemia Cells
• Numerical Analysis of a TMCZ Silicon Growth Furnace by Using a 3D Global Model
• Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
• Tight-Binding Approach to Initial Stage of the Graphitization Process on a Vicinal SiC Surface
• Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
• Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
• Magnetism of Single-Walled Carbon Nanotube with Pd Nanowire(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• A Theoretical Investigation of the Potential for Infer-Surface Migration of Ga Adatoms between GaAs(001) and (111)B Surfaces
• A Method for Calculating Momentum Matrix Elements with Pseudopotentials
• Universal Theory of Si Oxidation Rate Taking Account of Interfacial Si Emission
• First-Principles Study of the Oxide Growth Process on Silicon Surfaces and at Silicon-Oxide/Silicon Interfaces
• Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface
• Reliability and validity of Kasahara's scale of melancholic type of personality (Typus melancholicus) in a German sample population
• Mental health problems after stroke
• Perception of shape-from-motion in macaque monkeys and humans
• Detection of Herpes Simplex DNA in Semen and Menstrual Blood of Individuals Attending an Infertility Clinic
• Bayesian-Optimal Image Reconstruction for Translational-Symmetric Filters(Cross-disciplinary physics and related areas of science and technology)
• Ambiguity in the Effective Potential of Composite Fields
• Electronic States and Local Density of States in Graphene with a Corner Edge Structure
• Electron Wave Function in Armchair Graphene Nanoribbons
• Edge States and Flat Bands of Graphene Nanoribbons with Edge Modification
• Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001) (Special Issue : Solid State Devices and Materials (1))
• N Substitution in GaAs(001) Surface under an Atmosphere of Hydrogen
• Investigation of GaN Solution Growth Processes on Ga- and N-Faces by Molecular Dynamics Simulation
• Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon
• Identifying the Orientation of Edge of Graphene Using G Band Raman Spectra
• 27aSB-6 Doping Induced Magnetism in Zigzag Graphene Nanoribbon : A Many-body Perspective
• Theoretical Investigation of Oxygen Diffusion in Compressively Strained High-Density $ \alpha $-Quartz
• First-Principles Analyses of O2 Molecules around Ultrathin SiO2/Si(100) Interface
• Subjective Symptoms among Female Workers and Winter Working Conditions in a Consumer Cooperative
• Possibility of AlN Solution Growth Using Al and Li3N
• Effect of Nitrogen on Diffusion in Silicon Oxynitride
• Study on Thermoelectric Properties of Graphene
• Defective Carbon Nanotube for Use as a Thermal Rectifier
• The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2
• Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio
• Thermodynamic Analysis of Coherently Grown GaAsN/Ge: Effects of Different Gaseous Sources
• Stress Dependence of Oxidation Reaction at SiO2/Si Interfaces during Silicon Thermal Oxidation
• Enhancement of Boron Diffusion in Silicon by Continuous Wave CO2 Laser Irradiation
• Oxygen Trap Hypothesis in Silicon Oxide
• Effect of the Inclusion of Transparency on the Thermal Field and Interface Shape in Long-term Sublimation Growth of SiC Crystals()Opening Up a New World of Crystal Growth on SiC)
• Slow Dynamics Due to Singularities of Hierarchical Learning Machines
• A PCA Approach to Sourlas Code Analysis
• Effect of Si/SiO2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO2
• Transport Mechanism of Interfacial Network Forming Atoms during Silicon Oxidation
• Origin of Schottky Barrier Modification by Hydrogen on Diamond
• 27aXJ-8 Theoretical Studies on Electronic States of BC_3 Sheet and Edge Passivation Effect
• First-Principles Calculations of Uniaxial Strain Effects on Manganese in Silicon
• Charge-Injection Effects in a Single 4,4$''$-Terphenyldithiol Molecule
• The Effect of Chlorine on Silicon Oxidation: Simulation based on the Interfacial Silicon Emission Model
• Thermodynamic Analysis of Coherently Grown GaAsN/Ge: Effects of Different Gaseous Sources
• Quantum Hall Effect and Carrier Scattering in Quasi-Free-Standing Monolayer Graphene
• Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio

もっと見る 閉じる

スポンサーリンク