A Theoretical Investigation of the Potential for Infer-Surface Migration of Ga Adatoms between GaAs(001) and (111)B Surfaces

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概要

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• The potential for inter-surface migration of Ga adatoms between GaAs(001)-(2×4) and GaAs(111)B-(√<19>×√<19>) or -(2×2) is theoretically investigated. We used empirical interatomic potential and an energy term as a function of the number of electrons remaining in the Ga dangling bonds. The calculated results indicate that the lattice sites out the (001)-(2×4)β2 surface are more favorable for Ga adatoms than those on the (111)B-(√<19>×√<19>) and -(2×2) surfaces. This is because the formation of Ga-Ga dimers in the missing dimer rows on the (001)-(2×4)β2 surface suppresses the number of electrons remaining in theGa dangling bonds. These results suggest that Ga atoms favorably adsorb on the (001) top surface and that Ga atoms impinging on the (111)B side surface basically diffuse to the (001) top surface so long as both top and side surfaces are single-domain structures. This conclusion is consistent with some aspects of other experimnetal studies.

• 社団法人応用物理学会の論文
• 1998-05-01

著者

• KAGESHIMA Hiroyuki

  NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation

• SHIRAISHI Kenji

  NTT Basic Research Laboratories

• Ito Tomonori

  Ntt System Electronics Laboratories

• Kageshima Hiroyuki

  Ntt Basic Research Laboratories

• SUZUKI Yasuo

  NTT Basic Research Laboratories

• Ito Tomonori

  Ntt System Electroncis Laboratories

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