Kageshima Hiroyuki | Ntt Basic Research Laboratories

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著作論文

Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
Microscopic Mechanism of Oxygen Transport during Thermal Silicon Oxidation
Theoretical Study of Excess Si Emitted from Si-oxide/Si Interfaces
Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl
Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
Contact Conductance Measurement of Locally Suspended Graphene on SiC
Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
Tight-Binding Approach to Initial Stage of the Graphitization Process on a Vicinal SiC Surface
Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
Magnetism of Single-Walled Carbon Nanotube with Pd Nanowire(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
A Theoretical Investigation of the Potential for Infer-Surface Migration of Ga Adatoms between GaAs(001) and (111)B Surfaces
A Method for Calculating Momentum Matrix Elements with Pseudopotentials
Universal Theory of Si Oxidation Rate Taking Account of Interfacial Si Emission
First-Principles Study of the Oxide Growth Process on Silicon Surfaces and at Silicon-Oxide/Silicon Interfaces
Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface
Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001) (Special Issue : Solid State Devices and Materials (1))
Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon
Theoretical Investigation of Oxygen Diffusion in Compressively Strained High-Density $ \alpha $-Quartz
First-Principles Analyses of O2 Molecules around Ultrathin SiO2/Si(100) Interface
Effect of Nitrogen on Diffusion in Silicon Oxynitride
Study on Thermoelectric Properties of Graphene
The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2
Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio
Stress Dependence of Oxidation Reaction at SiO2/Si Interfaces during Silicon Thermal Oxidation
Oxygen Trap Hypothesis in Silicon Oxide
Effect of Si/SiO2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO2
Transport Mechanism of Interfacial Network Forming Atoms during Silicon Oxidation
Origin of Schottky Barrier Modification by Hydrogen on Diamond
First-Principles Calculations of Uniaxial Strain Effects on Manganese in Silicon
Charge-Injection Effects in a Single 4,4$''$-Terphenyldithiol Molecule
The Effect of Chlorine on Silicon Oxidation: Simulation based on the Interfacial Silicon Emission Model
Quantum Hall Effect and Carrier Scattering in Quasi-Free-Standing Monolayer Graphene
Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio

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