Hibino Hiroki | Ntt Basic Research Laboratories
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概要
関連著者
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Hibino Hiroki
Ntt Basic Research Laboratories
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HIBINO Hiroki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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Kageshima Hiroyuki
Ntt Basic Research Laboratories
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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Nagase Masao
Ntt Basic Research Laboratories
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Tanabe Shinichi
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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KAGESHIMA Hiroyuki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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Sekine Yoshiaki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Nagase Masao
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Hibino Hiroki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Hibino H
Ntt Basic Res. Lab. Kanagawa Jpn
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Kageshima Hiroyuki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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FURUKAWA Kazuaki
NTT Basic Research Laboratories
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OGINO Toshio
NTT Basic Research Laboratories
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MAEDA Fumihiko
NTT Basic Research Laboratories
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Yamaguchi Hiroshi
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corp.
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Nagase Masao
Faculty of Engineering, The University of Tokushima, Tokushima 770-8506, Japan
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Takamura Makoto
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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TANABE Shinichi
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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Homma Y
Ntt Interdisciplinary Res. Lab. Tokyo Jpn
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KOBAYASHI Yoshihiro
NTT Basic Research Laboratories
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HOMMA Yoshikazu
NTT Basic Research Laboratories
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MATSUMOTO Nobuo
Shonan Institute of Technology
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NAKAMURA Tomohiro
Shonan Institute of Technology
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SUGII Kiyomasa
NTT Basic Research Laboratories
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Ogino T
Ntt Basic Research Laboratories
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Akasaka Tetsuya
Ntt Basic Research Laboratories Ntt Corporation
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Kobayashi Yasuyuki
Ntt Basic Research Laboratories
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Takei Yusuke
Ntt Basic Research Laboratories Ntt Corporation
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Hibino Hiroki
NTT Basic Research laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Akasaka Tetsuya
NTT Basic Research Laboratories
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Suzuki Satoru
NTT Basic Research Laboratories
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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Kato Takayoshi
Reseach Institute Of Electronics Shizuoka University
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SEKINE Yoshiaki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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SUMITOMO Koji
NTT Basic Research Laboratories
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OKAMOTO Hajime
NTT Basic Research Laboratories
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Seki M
Ntt Applied Electronics Laboratories:(present Address)ntt Technology Transfer Corporation
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UENO Yuko
NTT Microsystem Integration Laboratories
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Hibino Hiroki
Ntt Basic Research Laboratories Ntt Corporation
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TAMECHIKA Emi
NTT Microsystem Integration Laboratories
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Koshikawa Takanori
Fundamental Electronics Research Institute Academic Frontier Promotion Center Osaka Electro-communic
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MIKI Kazushi
Research Center for Advanced Carbon Materials and Nanotechnology Research Institute National Institu
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MIKI Kazushi
Nanotechnology Research Institute-AIST
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SATO Tomoshige
JEOL Ltd.
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IWATSUKI Masashi
JEOL Ltd.
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AKASAKA Tetsuya
NTT Basic Research Laboratories, NTT Corporation
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KOBAYASHI Yasuyuki
NTT Basic Research Laboratories, NTT Corporation
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SEKI Masahiro
NTT Applied Electronics Laboratories
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HAYASHI Katsuyoshi
NTT Microsystem Integration Laboratories
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TOKUMOTO Hiroshi
Electrotechmical Laboratory
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HOMMA Yoshikazu
NTT Applied Electronics Laboratories
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MCCLELLAND Robert
NTT Applied Electronics Laboratories
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MIKI Kazushi
Electrotechnical Laboratory (ETL)
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HOMMA Yoshikazu
NTT Interdisciplinary Research Laboratories
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ISHIZAWA Suzuko
NTT Basic Research Laboratories
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SHINODA Yukinobu
NTT Basic Research Laboratories
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SUZUKI Mineharu
Center for Analytical Technology and Characterization, NTT Interdisciplinary Research Laboratories
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HOMMA Yoshikazu
Center for Analytical Technology and Characterization, NTT Interdisciplinary Research Laboratories
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FUKUDA Tsuneo
NTT Basic Research Laboratories
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WATANABE Yoshio
NTT Basic Research Laboratories
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Kobayashi Y
Department Of Nuclear Engineering Graduate School Of Engineering
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Miki K
Electrotechnical Laboratory (etl)
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Miki Kazushi
National Institute Of Materials Science (nims)
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Miki Kazushi
Aist
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Miki Kazushi
Nanoarchitecture Group Organic Nanomaterials Center National Institute For Materials Science
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Miki Kazushi
Electrotechnical Laboratory
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Seki M
Ntt Advanced Technologies
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Oshima Chuhei
Department Of Applied Physics Waseda University
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Harada Yuichi
Ntt Basic Research Laboratories
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Sugii K
Ntt Opt‐electronics Lab. Ibaraki Jpn
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Suzuki Mineharu
Center For Analytical Technology And Characterization Ntt Interdisciplinary Research Laboratories
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Kawamura Takaaki
Department Of Mathematics And Physics University Of Yamanashi
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Kawamura Takaaki
Department Of Physics Yamanashi University
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Makimoto Toshiki
Ntt Corp. Kanagawa Jpn
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Iwatsuki Masashi
Jeol Ltd
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Suzuki Satoru
Ntt Basic Research Laboratories Ntt Corporation And Crest Jst
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Seki Masahiro
Ntt Advanced Technology
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Homma Yoshikazu
Center For Analytical Technology And Characterization Ntt Interdisciplinary Research Laboratories
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Kawamura Takaaki
Department Of Applied Physics School Of Science And Engineering Waseda University
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Tokumoto Hiroshi
Electrotechincal Laboratory
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Furukawa Kazuaki
Ntt Corp. Kanagawa Jpn
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Furukawa Kazuaki
Ntt Basic Research Laboratories Ntt Corporation
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TAKEI Yusuke
NTT Basic Research Laboratories, NTT Corporation
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Suzuki Satoru
Ntt Basic Research Laboratories Ntt Corporation
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Suzuki Masahiko
Fundamental Electronics Research Institute Osaka Electro-communication University
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Suzuki Satoru
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Yasue Tsuneo
Fundamental Electronics Research Institute Academic Frontier Promotion Center Osaka Electro-communication University
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Otani Shigeki
National Inst. Materials Sci. Ibaraki Jpn
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ODAHARA Genki
Department of Applied Physics, Waseda University
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NAKAYAMA Nanao
Department of Applied Physics, Waseda University
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SHIMBATA Tomoyuki
Department of Applied Physics, Waseda University
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Nakayama Nanao
Department Of Applied Physics Waseda University
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Shimbata Tomoyuki
Department Of Applied Physics Waseda University
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Odahara Genki
Department Of Applied Physics Waseda University
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Suzuki Masahiko
Fundamental Electronics Research Institute Academic Frontier Promotion Center Osaka Electro-communication University
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Tomita Takuro
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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O Ryong-Sok
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Iwamoto Atsushi
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Nishi Yuki
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Funase Yuya
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Yuasa Takahiro
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Nagase Masao
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Hibino Hiroki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Hibino Hiroki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Hiroki Hibino
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Hibino Hiroki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan
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Hibino Hiroki
NTT Basic Research Laboratories, NTT Corporation
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FURUKAWA Kazuaki
NTT Basic Research Laboratories, NTT Corporation
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Sekine Yoshiaki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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SEKI Masahiro
NTT Advanced Technologies
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Kageshima Hiroyuki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Homma Yoshikazu
NTT Interdisciplinary Labs., Midori-cho, Musashino 180, Japan
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Tanabe Shinichi
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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TAMECHIKA Emi
NTT Microsystem Integration Laboratories, NTT Corporation
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Matsumoto Nobuo
Shonan Institute of Technology, 1-1-25 Tsujidonishikaigan, Fujisawa, Kanagawa 251-8511, Japan
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Fumihiko Maeda
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Maeda Fumihiko
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Nagase Masao
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Watanabe Yoshio
NTT Basic Research laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Webber Gregory
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Suzuki Satoru
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Kageshima Hiroyuki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan
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HARADA Yuichi
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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HAYASHI Katsuyoshi
NTT Microsystem Integration Laboratories, NTT Corporation
著作論文
- Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
- DC-Resistive-Heating-Induced Step Bunching on Vicinal Si (111)
- Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
- Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
- TEM Moire Pattern and Scanning Auger Electron Microscope Analysis of Anomalous Si Incorporation into MBE-grown Ge on Si(111)
- Reflection High-Energy Electron Diffraction Studies of Vicinal Si(111) Surfaces
- Real-Time Observation of (1×1)-(7×7) Phase Transition on Vicinal Si(111) Surfaces by Scanning Tunneling Microscopy
- Contact Conductance Measurement of Locally Suspended Graphene on SiC
- Observation of Incomplete Surface Melting of Si Using Medium-Energy Ion Scattering Spectroscopy
- Patterning-Assisted Control for Ordered Arrangement of Atomic Steps on Si(111) Surfaces
- Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
- Boron Nitride Thin Films Grown on Graphitized 6H–SiC Substrates by Metalorganic Vapor Phase Epitaxy
- Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
- Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface
- Thin Graphitic Structure Formation on Various Substrates by Gas-Source Molecular Beam Epitaxy Using Cracked Ethanol
- Origin of Reducing Domain Boundaries of Si(111)-7×7 during Homoepitaxial Growth
- Graphene Growth from a Spin-Coated Polymer without a Reactive Gas
- Formation of Graphene Nanofin Networks on Graphene/SiC(0001) by Molecular Beam Epitaxy (Special Issue : Microprocesses and Nanotechnology)
- Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001) (Special Issue : Solid State Devices and Materials (1))
- Macroscopic Single-Domain Graphene Growth on Polycrystalline Nickel Surface
- Graphene Growth from Spin-Coated Polymers without a Gas
- Microscopic Raman Mapping of Epitaxial Graphene on 4H-SiC(0001)
- Self-spreading of Supported Lipid Bilayer on SiO_2 Surface Bearing Graphene Oxide
- Study of Graphene Growth by Gas-Source Molecular Beam Epitaxy Using Cracked Ethanol: Influence of Gas Flow Rate on Graphitic Material Deposition
- Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio
- Epitaxial Trilayer Graphene Mechanical Resonators Obtained by Electrochemical Etching Combined with Hydrogen Intercalation
- Growth of Twinned Epitaxial Layers on Si(111)$\sqrt{3}\times\sqrt{3}$-B Studied by Low-Energy Electron Microscopy
- Graphene-modified Interdigitated Array Electrode : Fabrication, Characterization, and Electrochemical Immunoassay Application
- Quantum Hall Effect and Carrier Scattering in Quasi-Free-Standing Monolayer Graphene
- Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio