Origin of Reducing Domain Boundaries of Si(111)-7×7 during Homoepitaxial Growth
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概要
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The origin of reducing out-of-phase boundaries (OPBs) of 7×7 reconstructed domains on Si(111) surfaces during homoepitaxial growth is analyzed. Two conditions are necessary. One is that along a step, two or more starting points of OPBs should exist on the upper terrace in a region bounded by two adjacent terminating points of OPBs in the lower terrace. The other is that the step advancement in the region must be different from site to site so that the OPBs in the upper terrace bend to coalesce with each other. We first simulate the creation process of OPBs and then their reducing process using the above two conditions. The reduction process is closely related to the initial nucleation sites of 7×7 reconstruction along a step edge and to the propagation velocity of the 7×7 reconstructed region. The reported layer coverage dependence on the reduction of the average distance between the OPBs is reproduced by the simulation.
- 社団法人応用物理学会の論文
- 1999-03-15
著者
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Hibino Hiroki
Ntt Basic Research Laboratories
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OGINO Toshio
NTT Basic Research Laboratories
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Kawamura Takaaki
Department Of Mathematics And Physics University Of Yamanashi
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Kawamura Takaaki
Department Of Physics Yamanashi University
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Kawamura Takaaki
Department Of Applied Physics School Of Science And Engineering Waseda University
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