High Schottky Barriers between Amorphous-Si-P Alloy and P-Type Gallium Arsenide
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概要
- 論文の詳細を見る
Schottky barriers of as high as 0.75 V are formed between p-type GaAs and amorphous Si-P alloy films. These high barriers are probably caused by P atoms on the GaAs surface. Because this contact is temperature-stable and easily formed simply by conventional chemical vapor deposition (CVD), it is suitable for fabrication of GaAs complementary metal-semiconductor field effect transistors (MESFETs).
- 社団法人応用物理学会の論文
- 1991-08-15
著者
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OGINO Toshio
NTT Basic Research Laboratories
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Ogino T
Ntt Basic Research Laboratories
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OGINO Toshio
NTT LSI Laboratories
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