Electrical Properties of Amorphous Si-P/P-Type Si Schottky Barrier Contact

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概要

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• Electrical properties of a contact between amorphous silicon-phosphorous solid solution film (a-Si-P) and p-type Si are described. This contact is basically a Schottky contact because a-Si-P is one of the Fermi glasses. Its current-voltage (I-V) and capacitance-voltage (C-V) characteristics, however, exhibit anomalous features differing from those of an ideal Schottky contact. In the I-V curves, the forward current saturates at around 0.4 V, followed by an exponential rein-crease in current above 0.5 V. This is interpreted as a charge exchange between the interface states and a space-charge region formed in the a-Si-P electrode. In the C-V curves, an excess capacitance is observed even for reverse bias. The origin of this capacitance is also discussed.

• 社団法人応用物理学会の論文
• 1991-08-15

著者

• OGINO Toshio

  NTT LSI Laboratories

• Ogino Toshio

  Ntt Lsi Laboratories:(present Address)ntt Basic Research Laboratories

関連論文

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• High Schottky Barriers between Amorphous-Si-P Alloy and P-Type Gallium Arsenide
• Electrical Properties of Amorphous Si-P/P-Type Si Schottky Barrier Contact

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