DC-Resistive-Heating-Induced Step Bunching on Vicinal Si (111)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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HIBINO Hiroki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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Hibino Hiroki
Ntt Basic Research Laboratories
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HOMMA Yoshikazu
NTT Applied Electronics Laboratories
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MCCLELLAND Robert
NTT Applied Electronics Laboratories
関連論文
- Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
- DC-Resistive-Heating-Induced Step Bunching on Vicinal Si (111)
- Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
- Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
- TEM Moire Pattern and Scanning Auger Electron Microscope Analysis of Anomalous Si Incorporation into MBE-grown Ge on Si(111)
- Reflection High-Energy Electron Diffraction Studies of Vicinal Si(111) Surfaces
- Real-Time Observation of (1×1)-(7×7) Phase Transition on Vicinal Si(111) Surfaces by Scanning Tunneling Microscopy
- Contact Conductance Measurement of Locally Suspended Graphene on SiC
- Observation of Incomplete Surface Melting of Si Using Medium-Energy Ion Scattering Spectroscopy
- Patterning-Assisted Control for Ordered Arrangement of Atomic Steps on Si(111) Surfaces
- Growth of Twinned Epitaxial Layers on Si(111)√ × √-B Studied by Low-Energy Electron Microscopy
- Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
- Boron Nitride Thin Films Grown on Graphitized 6H–SiC Substrates by Metalorganic Vapor Phase Epitaxy
- Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
- Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface
- Thin Graphitic Structure Formation on Various Substrates by Gas-Source Molecular Beam Epitaxy Using Cracked Ethanol
- Origin of Reducing Domain Boundaries of Si(111)-7×7 during Homoepitaxial Growth
- Graphene Growth from a Spin-Coated Polymer without a Reactive Gas
- Formation of Graphene Nanofin Networks on Graphene/SiC(0001) by Molecular Beam Epitaxy (Special Issue : Microprocesses and Nanotechnology)
- Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001) (Special Issue : Solid State Devices and Materials (1))
- Macroscopic Single-Domain Graphene Growth on Polycrystalline Nickel Surface
- Graphene Growth from Spin-Coated Polymers without a Gas
- Microscopic Raman Mapping of Epitaxial Graphene on 4H-SiC(0001)
- Self-spreading of Supported Lipid Bilayer on SiO_2 Surface Bearing Graphene Oxide
- Study of Graphene Growth by Gas-Source Molecular Beam Epitaxy Using Cracked Ethanol: Influence of Gas Flow Rate on Graphitic Material Deposition
- Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio
- Epitaxial Trilayer Graphene Mechanical Resonators Obtained by Electrochemical Etching Combined with Hydrogen Intercalation
- Growth of Twinned Epitaxial Layers on Si(111)$\sqrt{3}\times\sqrt{3}$-B Studied by Low-Energy Electron Microscopy
- Graphene-modified Interdigitated Array Electrode : Fabrication, Characterization, and Electrochemical Immunoassay Application
- Quantum Hall Effect and Carrier Scattering in Quasi-Free-Standing Monolayer Graphene
- Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio