Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
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概要
- 論文の詳細を見る
Bilayer graphene was grown on the Si-face of SiC by thermal decomposition. Its electronic properties were investigated in top-gate Hall bar devices. By controlling the carrier density using gate voltage, we were able to access the charge neutrality point. The conductance at the charge neutrality point showed a strong temperature dependence, and its temperature dependence was well fitted with thermal activation and variable-range hopping mechanisms. The electrical detection of a band gap opening in bilayer graphene grown on SiC is a promising step toward the realization of graphene-based electronics using epitaxial graphene.
- 2011-04-25
著者
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Nagase Masao
Ntt Basic Research Laboratories
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Sekine Yoshiaki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Hibino Hiroki
Ntt Basic Research Laboratories
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Kageshima Hiroyuki
Ntt Basic Research Laboratories
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Tanabe Shinichi
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Hibino Hiroki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Sekine Yoshiaki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Kageshima Hiroyuki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Tanabe Shinichi
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Nagase Masao
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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