27pTX-9 Experimental study of spin interference phenomena in InGaAs/InAlAs rectangular loop arrays
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 2009-03-03
著者
-
Sekine Yoshiaki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
-
Sekine Yoshiaki
Ntt Brl Ntt Corporation
-
Faniel Sebastien
GSIST and CRIS, Hokkaido University
-
Koga Takaaki
GSIST and CRIS, Hokkaido University
-
Koga Takaaki
Gsist And Cris Hokkaido University
-
Faniel Sebastien
Gsist And Cris Hokkaido University
関連論文
- Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
- Detection of Magnetic Domain Wall in a Permalloy Wire by the Local Hall Effect
- Velocity Measurements of Magnetic Domain Wall by Local Hall Effect
- Electric-Field-Controllable Spin Interferometer Based on the Rashba Spin-Orbit Interaction
- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor p-In_Mn_As
- 27pTX-9 Experimental study of spin interference phenomena in InGaAs/InAlAs rectangular loop arrays
- Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
- Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
- Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001) (Special Issue : Solid State Devices and Materials (1))
- Beating Analysis of Shubnikov de Haas Oscillation in In0.53Ga0.47As Double Quantum Well toward Spin Filter Applications
- Beating Analysis of Shubnikov de Haas Oscillation in In_Ga_As Double Quantum Well toward Spin Filter Applications
- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor $p$-In0.97Mn0.03As