Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor $p$-In0.97Mn0.03As
スポンサーリンク
概要
- 論文の詳細を見る
The magnetization reversal process of submicrometer-scale Hall bars of the ferromagnetic semiconductor $p$-In0.97Mn0.03As has been investigated by measuring the Hall resistivity with changing the direction of the applied magnetic field. The angle dependence of the coercive force indicates that the magnetization reversal process is more likely governed by the magnetic domain wall displacement. Furthermore, observation of several Barkhausen jumps on a 0.7-μm-wide Hall bar makes it clear that $p$-In0.97Mn0.03As has a small-domain-sized multidomain structure near the coercive force. It is also shown that $p$-In0.97Mn0.03As has an ideal uniaxial magnetic easy axis perpendicular to the plane. The magnetization reversal process of $p$-In0.97Mn0.03As is distinct from that of a similar ferromagnetic semiconductor $p$-Ga1-xMnxAs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
-
Sekine Yoshiaki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
-
Slupinski Tomasz
Institute Of Experimental Physics Warsaw University
-
Oiwa Akira
Nanostructure And Material Property Presto Japan Science And Technology Agency
-
Munekata Hiroo
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
-
Yanagi Satoshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
-
Nitta Junsaku
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
-
Koga Takaaki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Sekine Yoshiaki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Oiwa Akira
Nanostructure and Material Property, PRESTO, Japan Science and Technology Agency, 4-1-8 Honchou, Kawaguchi, Saitama 332-0012, Japan
-
Yanagi Satoshi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
-
Nitta Junsaku
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
関連論文
- Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
- Detection of Magnetic Domain Wall in a Permalloy Wire by the Local Hall Effect
- Velocity Measurements of Magnetic Domain Wall by Local Hall Effect
- Electric-Field-Controllable Spin Interferometer Based on the Rashba Spin-Orbit Interaction
- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor p-In_Mn_As
- Conditions for the Spin Rectification Phenomena Predicted for Semiconducting Triple Barrier Structures in the Presence of the Rashba Spin-Orbit Coupling
- Investigation of Ferromagnetic Microstructures by Local Hall Effect and Magnetic Force Microscopy
- Conditions for the Spin Rectification Phenomena Predicted for Semiconducting Triple Barrier Structures in the Presence of Rashba Spin-Orbit Coupling
- 31a-ZF-6 Spin-split subbands in an inverted InGaAs/InAlAs heterostructure
- Superconducting Three-Terminal Devices Using an InAs-Based Two-Dimensional Electron Gas
- Characterization of Double-Buffer Layers and Its Application for the Metalorganic Vapor Phase Epitaxial Growth of GaN
- 27pTX-9 Experimental study of spin interference phenomena in InGaAs/InAlAs rectangular loop arrays
- Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
- Preparation and Characterization of Fe-Based III-V Diluted Magnetic Semiconductor(Ga, Fe)As
- Three-Step Molecular Beam Deposition of Crystalline Polydiacetylene Films on Semiconductor Substrates with Large Crystal Domains
- Molecular Beam Epitaxy of Wurtzite GaN-Based Magnetic Alloy Semiconductors : Semiconductors
- Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
- Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001) (Special Issue : Solid State Devices and Materials (1))
- Beating Analysis of Shubnikov de Haas Oscillation in In0.53Ga0.47As Double Quantum Well toward Spin Filter Applications
- Beating Analysis of Shubnikov de Haas Oscillation in In_Ga_As Double Quantum Well toward Spin Filter Applications
- Contribution of Shape Anisotropy to the Magnetic Configuration of (Ga, Mn)As
- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor $p$-In0.97Mn0.03As
- Characterization of Double-Buffer Layers and Its Application for the Metalorganic Vapor Phase Epitaxial Growth of GaN