Sekine Yoshiaki | Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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関連著者
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Sekine Yoshiaki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Hibino Hiroki
Ntt Basic Research Laboratories
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Kageshima Hiroyuki
Ntt Basic Research Laboratories
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Nagase Masao
Ntt Basic Research Laboratories
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Nagase Masao
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Hibino Hiroki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Kageshima Hiroyuki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Nitta Junsaku
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Tanabe Shinichi
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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SEKINE Yoshiaki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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KAGESHIMA Hiroyuki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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HIBINO Hiroki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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Sekine Yoshiaki
Ntt Brl Ntt Corporation
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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Slupinski Tomasz
Institute Of Experimental Physics Warsaw University
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SUGIYAMA Hiroki
NTT Photonics Laboratories
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Koga Takaaki
Gsist And Cris Hokkaido University
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Oiwa Akira
Nanostructure And Material Property Presto Japan Science And Technology Agency
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Munekata Hiroo
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Faniel Sebastien
Gsist And Cris Hokkaido University
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Matsuura Toru
Department Of Applied Physics Hokkaido University
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Faniel Sebastien
Icteam Institute The Universite Catholique De Louvain
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Mineshige Shunsuke
Division Of Electronics For Informatics Graduate School Of Information Science And Technology Hokkaido University
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Koga Takaaki
Division Of Electronics For Informatics Graduate School Of Information Science And Technology Hokkaido University
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Souma Satofumi
Department Of Electrical And Electronic Engineering Kobe University
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Sekine Yoshiaki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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TANABE Shinichi
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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NITTA Junsaku
NTT Basic Research Laboratories, NTT Corporation
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KOGA Takaaki
NTT Basic Research Laboratories, NTT Corporation
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MUNEKATA Hiroo
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Faniel Sebastien
GSIST and CRIS, Hokkaido University
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Koga Takaaki
GSIST and CRIS, Hokkaido University
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Souma Satofumi
Department Of Electronics And Electrical Engineering Kobe University
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Nitta Junsaku
Graduate School Of Engineering Tohoku University
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YANAGI Satoshi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Yanagi Satoshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Akazaki Tatsushi
Ntt Basic Research Laboratories
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Akazaki Tatsushi
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Yamaguchi Hiroshi
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corp.
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KOGA Takaaki
PRESTO, Japan Science and Technology Agency
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Koga Takaaki
Presto Japan Science And Technology Agency
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KOGA Takaaki
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University
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FANIEL Sebastien
ICTEAM Institute, the Universite catholique de Louvain
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MINESHIGE Shunsuke
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University
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Hibino Hiroki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Koga Takaaki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Kageshima Hiroyuki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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SOUMA Satofumi
Department of Electrical and Electronic Engineering, Kobe University
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Tanabe Shinichi
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Oiwa Akira
Nanostructure and Material Property, PRESTO, Japan Science and Technology Agency, 4-1-8 Honchou, Kawaguchi, Saitama 332-0012, Japan
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Yanagi Satoshi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
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Nagase Masao
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Nitta Junsaku
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
著作論文
- Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
- Detection of Magnetic Domain Wall in a Permalloy Wire by the Local Hall Effect
- Velocity Measurements of Magnetic Domain Wall by Local Hall Effect
- Electric-Field-Controllable Spin Interferometer Based on the Rashba Spin-Orbit Interaction
- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor p-In_Mn_As
- 27pTX-9 Experimental study of spin interference phenomena in InGaAs/InAlAs rectangular loop arrays
- Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
- Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
- Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001) (Special Issue : Solid State Devices and Materials (1))
- Beating Analysis of Shubnikov de Haas Oscillation in In0.53Ga0.47As Double Quantum Well toward Spin Filter Applications
- Beating Analysis of Shubnikov de Haas Oscillation in In_Ga_As Double Quantum Well toward Spin Filter Applications
- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor $p$-In0.97Mn0.03As