Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor p-In_<0.97>Mn_<0.03>As

スポンサーリンク

概要

• 論文の詳細を見る
• 2004-04-30

著者

• Sekine Yoshiaki

  Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation

• Slupinski Tomasz

  Institute Of Experimental Physics Warsaw University

• NITTA Junsaku

  NTT Basic Research Laboratories, NTT Corporation

• KOGA Takaaki

  NTT Basic Research Laboratories, NTT Corporation

• MUNEKATA Hiroo

  Imaging Science and Engineering Laboratory, Tokyo Institute of Technology

• Oiwa Akira

  Nanostructure And Material Property Presto Japan Science And Technology Agency

• Munekata Hiroo

  Imaging Science And Engineering Laboratory Tokyo Institute Of Technology

• YANAGI Satoshi

  Imaging Science and Engineering Laboratory, Tokyo Institute of Technology

関連論文

• Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
• Detection of Magnetic Domain Wall in a Permalloy Wire by the Local Hall Effect
• Velocity Measurements of Magnetic Domain Wall by Local Hall Effect
• Electric-Field-Controllable Spin Interferometer Based on the Rashba Spin-Orbit Interaction
• Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor p-In_Mn_As
• Conditions for the Spin Rectification Phenomena Predicted for Semiconducting Triple Barrier Structures in the Presence of the Rashba Spin-Orbit Coupling
• Investigation of Ferromagnetic Microstructures by Local Hall Effect and Magnetic Force Microscopy
• Conditions for the Spin Rectification Phenomena Predicted for Semiconducting Triple Barrier Structures in the Presence of Rashba Spin-Orbit Coupling
• Contribution of Shape Anisotropy to the Magnetic Configuration of (Ga, Mn)As
• Characterization of Double-Buffer Layers and Its Application for the Metalorganic Vapor Phase Epitaxial Growth of GaN
• 27pTX-9 Experimental study of spin interference phenomena in InGaAs/InAlAs rectangular loop arrays
• Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
• Preparation and Characterization of Fe-Based III-V Diluted Magnetic Semiconductor(Ga, Fe)As
• Three-Step Molecular Beam Deposition of Crystalline Polydiacetylene Films on Semiconductor Substrates with Large Crystal Domains
• Molecular Beam Epitaxy of Wurtzite GaN-Based Magnetic Alloy Semiconductors : Semiconductors
• Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
• Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
• Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001) (Special Issue : Solid State Devices and Materials (1))
• Beating Analysis of Shubnikov de Haas Oscillation in In0.53Ga0.47As Double Quantum Well toward Spin Filter Applications
• Beating Analysis of Shubnikov de Haas Oscillation in In_Ga_As Double Quantum Well toward Spin Filter Applications
• Contribution of Shape Anisotropy to the Magnetic Configuration of (Ga, Mn)As
• Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor $p$-In0.97Mn0.03As
• Characterization of Double-Buffer Layers and Its Application for the Metalorganic Vapor Phase Epitaxial Growth of GaN

もっと見る 閉じる

スポンサーリンク