Preparation and Characterization of Fe-Based III-V Diluted Magnetic Semiconductor(Ga, Fe)As
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概要
- 論文の詳細を見る
The Fe-based III-V diluted magnetic semiconductor(III-V-DMS), (Ga, Fe)As, has been grown successfully on GaAs(001)substrates by molecular beam epitaxy at a substrate temperature T_s ranging from 260-350°C. Secondary ion mass spectroscopy analysis has exhibited that the film composition can be expressed by Ga_<1-x>Fe_xAs. X-ray diffraction data have indicated that the lattice constant of Ga_<1-x>Fe_xAs decreases with increasing Fe composition. Magnetization data have exhibited that epilayers are predominantly paramagnetic, however, their detailed behavior differs from that of Mn-based DMS systems. The work has demonstrated that the physical properties of III-V-DMS can be changed significantly by the choice of transition metals.
- 社団法人応用物理学会の論文
- 2000-01-15
著者
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MUNEKATA Hiroo
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Hara Kazuhiko
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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YAMAURA Masaaki
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Munekata Hiroo
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Yamaura Masaaki
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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HANEDA Shigeru
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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TAKATANI Yukihiro
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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HARIGAE Shin-ichi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Haneda Shigeru
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Takatani Yukihiro
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Harigae Shin-ichi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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